公开(公告)号：US20250066921A1

公开(公告)日：2025-02-27

申请号：US18806917

申请日：2024-08-16

Applicant: ASM IP Holding B.V.

Inventor： Ranjit Rohidas Borude ,  Annisa Noorhidayati ,  Agung Setiadi ,  Hideaki Fukuda ,  Makoto Igarashi

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.