公开(公告)号：US20250066921A1

公开(公告)日：2025-02-27

申请号：US18806917

申请日：2024-08-16

Applicant: ASM IP Holding B.V.

Inventor： Ranjit Rohidas Borude ,  Annisa Noorhidayati ,  Agung Setiadi ,  Hideaki Fukuda ,  Makoto Igarashi

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.

公开(公告)号：US20240014030A1

公开(公告)日：2024-01-11

申请号：US18218726

申请日：2023-07-06

Applicant: ASM IP Holding B.V.

Inventor： Agung Setiadi ,  Hiroki Matsuda ,  Jun Kawahara

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/0217 ,  H01J37/32816 ,  H01J37/32449 ,  H01L21/0228 ,  H01L21/02211 ,  H01L21/02274 ,  H01J2237/332 ,  H01J2237/182

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatments process.

公开(公告)号：US20240318311A1

公开(公告)日：2024-09-26

申请号：US18610654

申请日：2024-03-20

Applicant: ASM IP Holding B.V.

Inventor： Agung Setiadi ,  Hiroki Matsuda ,  Jun Kawahara

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/515 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45542 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/515 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/32816 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01J2237/332

Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen under conditions that reduce incubation time for depositing the silicon nitride.