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1.发明授权公开(公告)号：US10804098B2
公开(公告)日：2020-10-13
申请号：US14457058
申请日：2014-08-11
Applicant: ASM IP Holding B.V.
Inventor： Petri Raisanen , Jung Sung-hoon , Verghese Mohith
Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
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2.发明申请SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES 审中-公开使用激素氮氧化物种金属氧化物薄膜沉积的系统和方法公开(公告)号：US20140346650A1
公开(公告)日：2014-11-27
申请号：US14457058
申请日：2014-08-11
Applicant: ASM IP Holding B.V.
Inventor： Petri Raisanen , Jung Sung-hoon , Verghese Mohith
IPC: H01L21/02 , C23C16/455 , C23C16/52 , H01L29/51
Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
Abstract translation: 本发明涉及将薄膜沉积到基底上的方法和系统。 本发明的一个方面是使用原子层沉积（ALD）沉积薄膜金属氧化物层。
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