公开(公告)号：US20240392439A1

公开(公告)日：2024-11-28

申请号：US18668596

申请日：2024-05-20

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  DaeYoun Kim ,  Yonjong Jeon ,  Vivek Upadhaya

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46

Abstract: A reaction lid and a Plasma Enhanced Atomic Layer Deposition (PEALD) apparatus with Remote Plasma Unit (RPU) using the reaction lid is disclosed. The reaction lid may comprise a gas inlet configured to flow a generated plasma and a processing gas into a wafer processing space, a top portion disposed below the gas inlet and having a truncated circular cone shape, the top portion defining the wafer processing space for flowing the generated plasma and the processing gas, a sidewall portion disposed below the top portion and a baffle placed at the mouth of the top portion below the gas inlet and configured to disperse the generated plasma and the processing gas throughout a surface of the wafer evenly by preventing the generated plasma and the processing gas from concentrating in the center of the wafer, wherein the wafer processing space is also defined by the sidewall portion.

公开(公告)号：US20250019828A1

公开(公告)日：2025-01-16

申请号：US18764500

申请日：2024-07-05

Applicant: ASM IP Holding B.V.

Inventor： Vivek Upadhaya ,  Yonjong Jeon ,  SungHoon Jun ,  DaeYoun Kim

IPC: C23C16/455 ,  H01L21/67

Abstract: A gas input structure for providing gas used in a wafer processing chamber is presented. The structure comprising a flow control ring having a sealing part and a retaining ring; and an outer body configured to encircle the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing a gas from the at least one gas tunnel to be injected through the plurality of holes into a gas channel, wherein the gas channel is connected to a wafer processing chamber.