公开(公告)号：US20220298630A1

公开(公告)日：2022-09-22

申请号：US17835082

申请日：2022-06-08

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20250019828A1

公开(公告)日：2025-01-16

申请号：US18764500

申请日：2024-07-05

Applicant: ASM IP Holding B.V.

Inventor： Vivek Upadhaya ,  Yonjong Jeon ,  SungHoon Jun ,  DaeYoun Kim

IPC: C23C16/455 ,  H01L21/67

Abstract: A gas input structure for providing gas used in a wafer processing chamber is presented. The structure comprising a flow control ring having a sealing part and a retaining ring; and an outer body configured to encircle the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing a gas from the at least one gas tunnel to be injected through the plurality of holes into a gas channel, wherein the gas channel is connected to a wafer processing chamber.

公开(公告)号：US20240392439A1

公开(公告)日：2024-11-28

申请号：US18668596

申请日：2024-05-20

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  DaeYoun Kim ,  Yonjong Jeon ,  Vivek Upadhaya

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46

Abstract: A reaction lid and a Plasma Enhanced Atomic Layer Deposition (PEALD) apparatus with Remote Plasma Unit (RPU) using the reaction lid is disclosed. The reaction lid may comprise a gas inlet configured to flow a generated plasma and a processing gas into a wafer processing space, a top portion disposed below the gas inlet and having a truncated circular cone shape, the top portion defining the wafer processing space for flowing the generated plasma and the processing gas, a sidewall portion disposed below the top portion and a baffle placed at the mouth of the top portion below the gas inlet and configured to disperse the generated plasma and the processing gas throughout a surface of the wafer evenly by preventing the generated plasma and the processing gas from concentrating in the center of the wafer, wherein the wafer processing space is also defined by the sidewall portion.

公开(公告)号：US12077857B2

公开(公告)日：2024-09-03

申请号：US18222024

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20230357925A1

公开(公告)日：2023-11-09

申请号：US18222024

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/4412 ,  C23C16/45565

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20230323558A1

公开(公告)日：2023-10-12

申请号：US18123508

申请日：2023-03-20

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  ByeongPil Park ,  Shinya Ueda

IPC: C25D11/18 ,  C23C16/46 ,  H01J37/32

CPC classification number: C25D11/18 ,  C23C16/463 ,  H01J37/32724

Abstract: A method of manufacturing a cooling device of a substrate processing apparatus includes: providing an aluminum plate having a through hole; forming a temperature control portion by anodizing the aluminum plate; and arranging the temperature control portion below a substrate support portion, wherein the temperature control portion is arranged so that a support rod of the substrate support portion passes through the through hole.

公开(公告)号：US11746414B2

公开(公告)日：2023-09-05

申请号：US17835082

申请日：2022-06-08

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US20230071798A1

公开(公告)日：2023-03-09

申请号：US17892780

申请日：2022-08-22

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  ByeongPil Park

IPC: H01L21/67

Abstract: A top lid capable of minimizing thermal deformation when a substrate processing temperature increases includes a support for supporting the top lid, the support protruding integrally from one surface of the top lid.

公开(公告)号：USD922229S1

公开(公告)日：2021-06-15

申请号：US29693892

申请日：2019-06-05

Applicant: ASM IP Holding B.V.

Designer： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

公开(公告)号：US20210002762A1

公开(公告)日：2021-01-07

申请号：US16917859

申请日：2020-06-30

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/50

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.