公开(公告)号：US20230245888A1

公开(公告)日：2023-08-03

申请号：US18161681

申请日：2023-01-30

Applicant: ASM IP Holding, B.V.

Inventor： Wonjong Kim ,  Rami Khazaka ,  Michael Eugene Givens

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02661

Abstract: Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to the substrate composition. The presently disclosed methods further comprise epitaxially forming a heteroepitaxial layer on the buffer layer. The heteroepitaxial layer has a heteroepitaxial layer composition which is different from the substrate composition.

公开(公告)号：US20240379353A1

公开(公告)日：2024-11-14

申请号：US18659368

申请日：2024-05-09

Applicant: ASM IP Holding B.V.

Inventor： Wonjong Kim ,  Rami Khazaka

IPC: H01L21/02 ,  C30B25/02

Abstract: A method for epitaxially forming an epitaxial stack on a substrate is disclosed. Embodiments of the presently described method comprise performing a plurality of deposition cycles to form the epitaxial stack, whereby each of the deposition cycles comprises deposition pulses to form the individual epitaxial layers of the epitaxial stack.

公开(公告)号：US20230349069A1

公开(公告)日：2023-11-02

申请号：US18307447

申请日：2023-04-26

Applicant: ASM IP Holding, B.V.

Inventor： Wonjong Kim ,  Rami Khazaka ,  Michael Givens ,  Charles Dezelah

IPC: C30B25/16 ,  C30B29/52 ,  C30B31/08 ,  C30B33/08 ,  C30B31/18

CPC classification number: C30B25/165 ,  C30B29/52 ,  C30B31/08 ,  C30B31/18 ,  C30B33/08

Abstract: Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.