利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

33 条记录 (耗时 0.009 秒)

    Bubbler cylinder and dip tube device
    2.
    发明授权
    Bubbler cylinder and dip tube device 失效
    鼓泡筒和汲取管装置

    公开(公告)号：US4506815A

    公开(公告)日：1985-03-26

    申请号：US448160

    申请日：1982-12-09

    申请人： Andreas A. Melas ,  John W. O'Grady, Jr.

    发明人： Andreas A. Melas ,  John W. O'Grady, Jr.

    IPC分类号： F17C7/00 ,  C23C16/448 ,  C30B25/14 ,  C30B31/08 ,  F17C1/00 ,  F17C13/04 ,  B65D83/00

    CPC分类号： C30B31/08 ,  C23C16/4482 ,  C30B25/14

    摘要： An all welded square bottomed stainless steel cylinder and dip tube device for transferring by vapor deposition very reactive electronic grade organometallic liquid to a deposition system includes a top fill opening and inlet and outlet diaphragm valves, and is coated on the interior with PVF Teflon to several thousandths of an inch thickness. Contamination of the liquid is eliminated or at least substantially minimized since the device is stable in an upright position, the diaphragm valves each have a very small and inert area exposed to the liquid, and the coating serves as a barrier to contamination of the liquid by the metal of which the cylinder and dip tube are made.

    摘要翻译： 用于通过气相沉积非常活性的电子级有机金属液体转移到沉积系统的全焊接方形底部不锈钢圆筒和浸渍管装置包括顶部填充开口和入口和出口隔膜阀，并且用PVF特氟隆涂覆在内部至几个 千分之一英寸厚。 液体的污染被消除或至少基本上最小化，因为该装置在直立位置是稳定的，隔膜阀各自具有暴露于液体的非常小和惰性的区域，并且该涂层作为液体污染的屏障 制造气缸和汲取管的金属。

    Vapor-solid diffusion of semiconductive material
    4.
    发明授权
    Vapor-solid diffusion of semiconductive material 失效
    半导体材料的气固扩散

    公开(公告)号：US3066052A

    公开(公告)日：1962-11-27

    申请号：US74095858

    申请日：1958-06-09

    申请人： BELL TELEPHONE LABOR INC

    发明人： HOWARD BRIAN T

    IPC分类号： C30B31/02 ,  C30B31/06 ,  C30B31/08 ,  H01L21/00 ,  H01L21/316

    CPC分类号： H01L21/31604 ,  C30B29/06 ,  C30B31/02 ,  C30B31/06 ,  C30B31/08 ,  H01L21/00 ,  Y10S438/92

    摘要： 909,869. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. June 3, 1959 [June 9, 1958], No. 18920/59. Class 37. A silicon body into which an impurity is to be introduced is subjected to an atmosphere including the impurity in the vapour form for such a time and at such a temperature that a layer of glass is produced on the surface of the body with an impurity diffused layer beneath the glass; the glass is then removed by etching and the body heated so as to cause the impurity to diffuse further into the body. The Specification states that the concentration of the impurity measured after removal of the glass is found to be a constant substantially independent of both vapour pressure and temperature of the silicon. In the arrangement shown in Fig. 1, the silicon body is mounted on a base 12 with a closely fitting lid and made of fused alumina or platinum and is placed in a silicon furnace tube 11 through which flows an atmosphere which is interchanged with that in the box. Where boron is the impurity the body is first etched and plated or may have an oxidized layer produced on its surface as described in Specification 809,644. Boron trioxide is plated in the bottom of the box and the silicon body 13 placed on a platform 15. The box restricts the volume in which the source material vaporizes so as to provide an excess of impurity in contact with the silicon. The diffusion step may be conducted at a temperature in the range 700‹ to 1300‹ C. At temperature below 1150‹ C. the atmosphere may be an inert gas, e.g. nitrogen argon or helium; at temperatures above 1150‹ C. oxygen must be introduced to prevent the silicon from pitting. A dark deposit which sometimes occurs may be avoided by using a mixture of boron trioxide and silicon dioxide. The resultant body has a layer in which the impurity predominates and a layer of glass. The glass is removed by means of an etchant which does not attack the silicon, e.g. hydrofluoric acid and is then placed on a platform in a furnace of the type described above, and heated for a time and temperature determined by the degree of diffusion required in an atmosphere of pure oxygen or of oxygen and an inert gas. A temperature of from 700‹ to 1350‹ C. is suggested but 1100‹ to 1300‹ C. is preferred. In an arrangement for depositing phosphorous (Fig. 2) from phosphorous pentoxide in a container 29 kept by a heating coil at 275‹ to 230‹ C. a gas containing the phosphorous vapour flows over the silicon 22 which is maintained at from 700‹ to 1300‹ C. The Specification indicates the possibility of using antimony. Whatever the impurity it must be capable of forming a glass with silicon. If the impurity source is not an oxide either pre-oxidized silicon or an oxygen atmosphere must be used. Specification 816,799 also is referred to.

    Laser media with controlled concentration profile of active laser ions and method of making the same
    7.
    发明授权
    Laser media with controlled concentration profile of active laser ions and method of making the same 有权
    具有活性激光离子受控浓度分布的激光介质及其制备方法

    公开(公告)号：US08175131B2

    公开(公告)日：2012-05-08

    申请号：US12397082

    申请日：2009-03-03

    申请人： Kevin W. Kirby ,  David S. Sumida

    发明人： Kevin W. Kirby ,  David S. Sumida

    IPC分类号： H01S3/14

    CPC分类号： H01S3/0617 ,  C30B29/28 ,  C30B31/08 ,  C30B31/18 ,  H01S3/061 ,  H01S3/08045 ,  H01S3/1618 ,  H01S3/1643

    摘要： A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second portion of the dopant species has a second valence state. In an embodiment, a concentration of the first portion of the dopant species decreases radially with increasing distance from a center of the medium, and a concentration of the second portion of the dopant species increases radially with increasing distance from the center of the medium. The laser medium further comprises impurities within the solid-state host material, the impurities converting the first portion of the dopant species having the first valence state into the second portion of dopant species having the second valence state.

    摘要翻译： 激光介质包括固态主体材料和设置在固态主体材料内的掺杂物质。 掺杂剂物质的第一部分具有第一价态，并且掺杂剂物质的第二部分具有第二价态。 在一个实施方案中，掺杂剂物质的第一部分的浓度随着距离介质中心的距离增加而径向减小，并且掺杂剂物质的第二部分的浓度随着距离介质中心的距离增加而径向增加。 激光介质还包括在固态主体材料内的杂质，杂质将具有第一价态的掺杂物种的第一部分转化成具有第二价态的掺杂物种的第二部分。

    Method of doping the surface of a metal-oxygen compound
    8.
    发明授权
    Method of doping the surface of a metal-oxygen compound 失效
    一种金属氧化物表面喷涂方法

    公开(公告)号：US3813292A

    公开(公告)日：1974-05-28

    申请号：US23069572

    申请日：1972-03-01

    申请人： PHILIPS CORP

    发明人： BOONSTRA A ,  SCHAMPERS P ,  NETTEN A

    IPC分类号： C30B31/08 ,  B44D1/14 ,  B44D1/18

    CPC分类号： H01J9/233 ,  C30B29/16 ,  C30B31/08

    摘要： DOPING OF THE SURFACE OF A METAL-OXYGEN COMPOUND BY EXPOSURE TO AND CHEMISORPTION OF A REACTIVE GAS COMPRISING AN OXYGEN-REPLACING ELEMENT IS EFFECTED AT SUCH A LOW TEMPERATURE THAT THE ADSORBED GAS IS NOT DECOMPOSED. A CORRECT QUANTITY OF REACTIVE GAS BEING ADSORBED THEN LEADS TO DISCRETE ADSORPTION DENSITIES OF LESS THAN 1. USED FOR SHIFTING THE PHOTOSENSITIVITY OF A LEAD MONOXIDE TARGET PLATE FOR A CAMERA TUBE OF THE VIDICON TYPE TO LONGER WAVELENGTHS.