公开(公告)号：US11626316B2

公开(公告)日：2023-04-11

申请号：US16950899

申请日：2020-11-17

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/56

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

公开(公告)号：US20240429044A1

公开(公告)日：2024-12-26

申请号：US18746827

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Yan Zhang ,  Ryu Nakano

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768

Abstract: Provided is a method of filling a gap formed on a substrate, the method comprising the steps of providing the substrate onto a substrate support in a reaction chamber, forming a film on the substrate comprising the steps of supplying a first gas to the reaction chamber and supplying a second gas to the reaction chamber, and treating the film formed on the substrate comprising the steps of supplying a third gas to the reaction chamber and supplying a fourth gas to the reaction chamber, wherein the second gas and the fourth gas are activated in-situ and the third gas is activated remotely.

公开(公告)号：US20210151348A1

公开(公告)日：2021-05-20

申请号：US16950899

申请日：2020-11-17

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23C16/04

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

公开(公告)号：US20210066075A1

公开(公告)日：2021-03-04

申请号：US17003919

申请日：2020-08-26

Applicant: ASM IP Holding B.V.

Inventor： Yan Zhang ,  Toshihisa Nozawa

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of forming structures having dielectric films with improved properties, such as, for example, improved elastic modulus and/or dielectric constant are disclosed. Exemplary films can be formed using a cyclic deposition process. Exemplary methods use activated species to cleave (e.g., symmetric-structured) precursor molecules to form the high quality dielectric layers.