公开(公告)号：US11476109B2

公开(公告)日：2022-10-18

申请号：US16896238

申请日：2020-06-09

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

公开(公告)号：US20210017648A1

公开(公告)日：2021-01-21

申请号：US16930211

申请日：2020-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/48 ,  C23C16/40

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US10658181B2

公开(公告)日：2020-05-19

申请号：US15900425

申请日：2018-02-20

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa ,  Dai Ishikawa ,  Tomohiro Kubota

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

Abstract: A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.

公开(公告)号：US20180301342A1

公开(公告)日：2018-10-18

申请号：US15488318

申请日：2017-04-14

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Toshihisa Nozawa

IPC: H01L21/285 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  C23C16/44 ,  C23C16/06 ,  C23C16/34 ,  H01J37/32

CPC classification number: H01L21/28556 ,  C23C16/06 ,  C23C16/34 ,  C23C16/347 ,  C23C16/4408 ,  C23C16/45536 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28568

Abstract: An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

公开(公告)号：US11605528B2

公开(公告)日：2023-03-14

申请号：US16921866

申请日：2020-07-06

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

公开(公告)号：US20210013010A1

公开(公告)日：2021-01-14

申请号：US16921866

申请日：2020-07-06

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

公开(公告)号：US20190259611A1

公开(公告)日：2019-08-22

申请号：US15925532

申请日：2018-03-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: H01L21/033 ,  H01L21/027 ,  H01J37/32 ,  H01L21/3065

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US10290523B2

公开(公告)日：2019-05-14

申请号：US15461950

申请日：2017-03-17

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/68 ,  G05B19/418

Abstract: A wafer processing apparatus includes a controller connected to a first robot and a second robot. The controller controls the first robot so that the wafer is placed on a first load lock stage in such a way that the center of the wafer is shifted from the center of the first load lock stage by a first position shift amount and another wafer is placed on a second load lock stage in such a way that the center of the wafer is shifted from the center of the second load lock stage by a second position shift amount. The controller controls the second robot so that the second robot simultaneously conveys two wafers between the first and second load lock stages, and a first processing stage and a second processing stage.

公开(公告)号：US09960033B1

公开(公告)日：2018-05-01

申请号：US15382081

申请日：2016-12-16

Applicant: ASM IP HOLDING B.V.

Inventor： Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/31116

Abstract: A method of filling recesses or grooves on a patterned surface with a layer of film, by combining depositing a film by PEALD/PPECVD on the patterned surface and etching the film, wherein the deposition and the etching are separately controlled, and wherein the conditions for deposition can be controlled by controlling RF power.

公开(公告)号：US20240162037A1

公开(公告)日：2024-05-16

申请号：US18410333

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.