公开(公告)号：US20220359215A1

公开(公告)日：2022-11-10

申请号：US17724337

申请日：2022-04-19

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Masaru Hori ,  Nobuyoshi Kobayashi ,  Yoshinori Oda ,  Charles Dezelah

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455

Abstract: The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.