SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS HAVING SUBSTRATE SUPPORTS, AND METHODS OF MAKING SUBSTRATE SUPPORTS FOR SEMICONDUCTOR PROCESSING SYSTEMS

    公开(公告)号:US20230212752A1

    公开(公告)日:2023-07-06

    申请号:US18147106

    申请日:2022-12-28

    CPC classification number: C23C16/46 H01L21/68785 H05B3/283 H01J37/32357

    Abstract: A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

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