公开(公告)号：US20230265556A1

公开(公告)日：2023-08-24

申请号：US18142147

申请日：2023-05-02

Applicant: ASM IP Holding B.V. ,  Universiteit Gent

Inventor： Matthias Minjauw ,  Jolien Dendooven ,  Christophe Detavernier

IPC: C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  H01L21/285

CPC classification number: C23C16/06 ,  C23C16/40 ,  C23C16/45527 ,  H01L21/28556

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20210095372A1

公开(公告)日：2021-04-01

申请号：US16970210

申请日：2018-02-14

Applicant: ASM IP Holding B.V. ,  Universiteit Gent

Inventor： Matthias Minjauw ,  Jolien Dendooven ,  Christophe Detavernier

IPC: C23C16/06 ,  H01L21/285 ,  C23C16/455 ,  C23C16/40

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11685991B2

公开(公告)日：2023-06-27

申请号：US16970210

申请日：2018-02-14

Applicant: ASM IP Holding B.V. ,  Universiteit Gent

Inventor： Matthias Minjauw ,  Jolien Dendooven ,  Christophe Detavernier

IPC: C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  H01L21/285

CPC classification number: C23C16/06 ,  C23C16/40 ,  C23C16/45527 ,  H01L21/28556

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.