公开(公告)号：US20180307135A1

公开(公告)日：2018-10-25

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Everhardus Cornelis MOS ,  Richard Johannes Franciscus VAN HAREN ,  Peter Hanzen WARDENIER ,  Erik JENSEN ,  Bernardo KASTRUP ,  Michael KUBIS ,  Johannes Catharinus Hubertus MULKENS ,  Davis Frans Simon DECKERS ,  Wolfgang Helmut HENKE ,  Joungchel LEE

IPC: G03F1/72 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03B27/68 ,  G03F7/70425 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.