公开(公告)号：US20240310718A1

公开(公告)日：2024-09-19

申请号：US18578299

申请日：2022-07-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Ayman HAMOUDA ,  Dong MAO

IPC: G03F1/36 ,  G03F1/70

CPC classification number: G03F1/36 ,  G03F1/70

Abstract: A method for generating a mask pattern for a lithographic process. The method involves generating a smoothed representation of a segmented mask pattern by applying a first smoothing function and adjusting the segmented mask pattern by with a set of changes to one or more of the plurality of segmented features. Further, a patterning process simulation is performed in an iterative manner by using the smoothed mask pattern of an adjusted segmented mask pattern until a termination condition is satisfied. In each iteration, upon adjusting the segmented mask pattern, a smoothed mask pattern is generated and used by process models to simulate the patterning process. Once the termination condition is satisfied, a resultant segmented mask pattern is obtained. Then, a final mask pattern is generated by applying a second smoothing function to a resultant segmented mask pattern.