公开(公告)号：US12210291B2

公开(公告)日：2025-01-28

申请号：US17927866

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue Peng ,  Zhan Shi ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Gerui Liu

IPC: G03F7/00

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New pattering process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new pattering process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.