公开(公告)号：US11977334B2

公开(公告)日：2024-05-07

申请号：US18089940

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC: G03F7/00

CPC classification number: G03F7/70266 ,  G03F7/705 ,  G03F7/7055

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US11886124B2

公开(公告)日：2024-01-30

申请号：US17971361

申请日：2022-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu

IPC: G03F7/00 ,  G03F1/24

CPC classification number: G03F7/705 ,  G03F1/24 ,  G03F7/70125 ,  G03F7/70441

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：US11487198B2

公开(公告)日：2022-11-01

申请号：US17477765

申请日：2021-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Jingjing Liu

IPC: G03F1/36

Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

公开(公告)号：US10025201B2

公开(公告)日：2018-07-17

申请号：US15303199

申请日：2015-02-13

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Xiaofeng Liu

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

公开(公告)号：US11506984B2

公开(公告)日：2022-11-22

申请号：US15567606

申请日：2016-05-13

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Jianjun Jia

IPC: G03F7/20 ,  G06F30/367 ,  G06F119/18

Abstract: A method including: determining a first simulated partial image formed, by a lithographic projection apparatus, from a first radiation portion propagating along a first group of one or more directions; determining a second simulated partial image formed, by the lithographic projection apparatus, from a second radiation portion propagating along a second group of one or more directions; and determining an image by incoherently adding the first partial image and the second partial image, wherein the first group of one or more directions and the second group of one or more directions are different.

公开(公告)号：US10386727B2

公开(公告)日：2019-08-20

申请号：US15126234

申请日：2015-03-03

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Jianjun Jia ,  Xiaofeng Liu ,  Cuiping Zhang

IPC: G03F7/20 ,  G03F1/36

Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.

公开(公告)号：US10331039B2

公开(公告)日：2019-06-25

申请号：US15512540

申请日：2015-09-23

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Kurt E. Wampler

IPC: G03F1/36 ,  G03F7/20

Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve, of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using one or more rules based on one or more parameters selected from: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.

公开(公告)号：US12210291B2

公开(公告)日：2025-01-28

申请号：US17927866

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue Peng ,  Zhan Shi ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Gerui Liu

IPC: G03F7/00

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New pattering process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new pattering process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

公开(公告)号：US20240419086A1

公开(公告)日：2024-12-19

申请号：US18819516

申请日：2024-08-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Qinglin Li

IPC: G03F7/00

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

公开(公告)号：US11846889B2

公开(公告)日：2023-12-19

申请号：US17436305

申请日：2020-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Dezheng Sun

IPC: G03F7/00

CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A diffraction pattern guided source mask optimization (SMO) method that includes determining a source variable region from a diffraction pattern. The source variable region corresponds to one or more areas of a diffraction pattern in a pupil for which one or more pupil variables are to be adjusted. The source variable region in the diffraction pattern includes a plurality of pixels in an image of a selected region of interest in the diffraction pattern. Determining the source variable region can include binarization of the plurality of pixels in the image such that individual pixels are either included in the source variable region or excluded from the source variable region. The method can include adjusting the one or more pupil variables for the one or more areas of the pupil that correspond to the source variable region; and rendering a final pupil based on the adjusted one or more pupil variables.