公开(公告)号：US11580289B2

公开(公告)日：2023-02-14

申请号：US17297801

申请日：2019-10-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Roshni Biswas ,  Rafael C. Howell ,  Cuiping Zhang ,  Ningning Jia ,  Jingjing Liu ,  Quan Zhang

IPC: G06F30/30 ,  G03F7/20 ,  G06F30/398 ,  G06F30/392 ,  G06F119/18

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：US11506984B2

公开(公告)日：2022-11-22

申请号：US15567606

申请日：2016-05-13

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Jianjun Jia

IPC: G03F7/20 ,  G06F30/367 ,  G06F119/18

Abstract: A method including: determining a first simulated partial image formed, by a lithographic projection apparatus, from a first radiation portion propagating along a first group of one or more directions; determining a second simulated partial image formed, by the lithographic projection apparatus, from a second radiation portion propagating along a second group of one or more directions; and determining an image by incoherently adding the first partial image and the second partial image, wherein the first group of one or more directions and the second group of one or more directions are different.

公开(公告)号：US10401732B2

公开(公告)日：2019-09-03

申请号：US15451328

申请日：2017-03-06

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Hsu ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

IPC: G03F7/20

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

公开(公告)号：US11734490B2

公开(公告)日：2023-08-22

申请号：US17564837

申请日：2021-12-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

IPC: G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/00 ,  G06F119/18

CPC classification number: G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/705 ,  G06F2119/18

Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

公开(公告)号：US11409203B2

公开(公告)日：2022-08-09

申请号：US17326481

申请日：2021-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu Cao ,  Yen-Wen Lu ,  Peng Liu ,  Rafael C. Howell ,  Roshni Biswas

IPC: G03F7/20 ,  G03F1/36

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US11232249B2

公开(公告)日：2022-01-25

申请号：US16976492

申请日：2019-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

IPC: G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G06F119/18

Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

公开(公告)号：US11054750B2

公开(公告)日：2021-07-06

申请号：US15023330

申请日：2014-09-11

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Feng-Liang Liu

IPC: G03F7/20

Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.

公开(公告)号：US10459346B2

公开(公告)日：2019-10-29

申请号：US16036732

申请日：2018-07-16

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Xiaofeng Liu

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

公开(公告)号：US11977334B2

公开(公告)日：2024-05-07

申请号：US18089940

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC: G03F7/00

CPC classification number: G03F7/70266 ,  G03F7/705 ,  G03F7/7055

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US20230161264A1

公开(公告)日：2023-05-25

申请号：US18089940

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC: G03F7/20

CPC classification number: G03F7/70266 ,  G03F7/705 ,  G03F7/7055

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.