CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM
    1.
    发明申请
    CORRECTION FOR FLARE EFFECTS IN LITHOGRAPHY SYSTEM 有权
    校正系统中的FLASH效应的校正

    公开(公告)号:US20150058815A1

    公开(公告)日:2015-02-26

    申请号:US14537441

    申请日:2014-11-10

    Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

    Abstract translation: 描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。 通过将曝光场上的设计布局的密度图与点扩散函数(PSF)进行数学组合来模拟光刻设备的曝光区域中的耀斑图,其中可以在闪光图中对系统特定的影响 模拟。 通过使用确定的耀斑图计算设计布局的位置相关的光斑校正,从而减少了耀斑的影响。

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