公开(公告)号：US20160026750A1

公开(公告)日：2016-01-28

申请号：US14874134

申请日：2015-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Hua-Yu LIU

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70666 ,  G06F17/50 ,  G06F17/5009

Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to tools for co-optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention enables full chip pattern coverage while lowering the computation cost by intelligently selecting a small set of critical design patterns from the full set of clips to be used in source and mask optimization. Optimization is performed only on these selected patterns to obtain an optimized source. The optimized source is then used to optimize the mask (e.g. using OPC and manufacturability verification) for the full chip, and the process window performance results are compared. If the results are comparable to conventional full-chip SMO, the process ends, otherwise various methods are provided for iteratively converging on the successful result.

公开(公告)号：US20150058815A1

公开(公告)日：2015-02-26

申请号：US14537441

申请日：2014-11-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Hua-Yu LIU ,  Jiangwei LI ,  Luoqi CHEN ,  Wei Liu ,  Jiong Jiang

IPC: G06F17/50

Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

Abstract translation: 描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。 通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响 模拟。 通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。