公开(公告)号：US20210080836A1

公开(公告)日：2021-03-18

申请号：US17102850

申请日：2020-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20200019067A1

公开(公告)日：2020-01-16

申请号：US16335277

申请日：2017-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cedric Desire GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20200278614A1

公开(公告)日：2020-09-03

申请号：US16762982

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Bijoy RAJASEKHARAN ,  Lydia Marianna VERGAIJ-HUIZER ,  Jochem Sebastiaan WILDENBERG ,  Ronald VAN ITTERSUM ,  Pieter Gerardus Jacobus SMORENBERG ,  Robertus Wilhelmus VAN DER HEIJDEN ,  Xiuhong WEI ,  Hadi YAGUBIZADE

IPC: G03F7/20

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.

公开(公告)号：US20220291593A1

公开(公告)日：2022-09-15

申请号：US17639364

申请日：2020-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Pui Leng LAM ,  Blandine Marie Andree Richit MINGHETTI ,  Vahid BASTANI ,  Mohamadrezh HAJIAHMADI ,  Lydia Marianna VERGAIJ-HUIZER ,  Frans Reinier SPIERING

IPC: G03F7/20 ,  G03F1/42

Abstract: A method for characterizing a patterning process, the method including obtaining a plurality of values of stitching errors made along one or more boundaries between at least two patterned adjacent fields or sub-fields on a substrate; and fitting, using a hardware computer system, a distortion model to the plurality of values to obtain a fingerprint representing deformation of a field or sub-field out of the at least two patterned adjacent fields or sub-fields.

公开(公告)号：US20220229373A1

公开(公告)日：2022-07-21

申请号：US17715112

申请日：2022-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Weitian KOU ,  Alexander YPMA ,  Marc HAUPTMANN ,  Michiel KUPERS ,  Lydia Marianna VERGAIJ-HUIZER ,  Erik Johannes Maria WALLERBOS ,  Erik Henri Adriaan DELVIGNE ,  Willem Seine Christian ROELOFS ,  Hakki Ergün CEKLI ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Cédric Désiré GROUWSTRA ,  David Frans Simon DECKERS ,  Manuel GIOLLO ,  Iryna DOVBUSH

IPC: G03F7/20

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

公开(公告)号：US20210405544A1

公开(公告)日：2021-12-30

申请号：US17289290

申请日：2019-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Lydia Marianna VERGAIJ-HUIZER

IPC: G03F7/20 ,  G06N3/04 ,  G06N3/08 ,  G06K9/62

Abstract: A method for obtaining a training data set including synthetic metrology data, the training data set being configured for training of a model relating to a manufacturing process for manufacturing an integrated circuit. The method includes obtaining behavioral property data describing a behavior of a process parameter resultant from the manufacturing process and/or a related tool or effect. Additionally, or alternatively metrology data performed on a structure formed by the manufacturing process and/or a similar manufacturing process may be obtained. Using the behavioral property data and/or metrology data, synthetic metrology data is determined, which describes the effect of variations in the manufacturing process, and/or a related tool or effect on the process parameter. The model is trained using the training data set including the synthetic metrology data.