公开(公告)号：US20220351932A1

公开(公告)日：2022-11-03

申请号：US17633556

申请日：2020-08-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian ZHANG ,  Ning YE ,  Zhiwen KANG ,  Yixiang WANG

IPC: H01J37/02 ,  G02B27/09

Abstract: A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.

公开(公告)号：US20230395352A1

公开(公告)日：2023-12-07

申请号：US18362757

申请日：2023-07-31

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jun JIANG ,  Jian ZHANG ,  Yixiang WANG

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20220189733A1

公开(公告)日：2022-06-16

申请号：US17553357

申请日：2021-12-16

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jun JIANG ,  Jian ZHANG ,  Yixiang WANG

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20220375715A1

公开(公告)日：2022-11-24

申请号：US17771761

申请日：2020-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian ZHANG ,  Ning YE ,  Yixiang WANG ,  Jie FANG

IPC: H01J37/22 ,  H01J37/28

Abstract: An apparatus for and a method of inspecting a substrate in which a charged particle beam is arranged to impinge on a portion of the substrate and a first light beam having a first wavelength and a second light beam having a second wavelength different from the first wavelength are also arranged to impinge on the portion of the substrate.

公开(公告)号：US20220270849A1

公开(公告)日：2022-08-25

申请号：US17638765

申请日：2020-08-26

Applicant: ASML Netherlands B.V.

Inventor： Jun JIANG ,  Chih-Yu JEN ,  Ning YE ,  Jian ZHANG

IPC: H01J37/28 ,  G01R31/307

Abstract: A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.