公开(公告)号：US20230335374A1

公开(公告)日：2023-10-19

申请号：US18019088

申请日：2021-07-27

Applicant: ASML Netherlands B.V.

Inventor： Benoit Herve GAURY ,  Jun JIANG ,  Bruno LA FONTAINE ,  Shakeeb Bin HASAN ,  Kenichi KANAI ,  Jasper Frans Mathijs VAN RENS ,  Cyrus Emil TABERY ,  Long MA ,  Oliver Desmond PATTERSON ,  Jian ZHANG ,  Chih-Yu JEN ,  Yixiang WANG

IPC: H01J37/26 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/228 ,  H01J2237/2482

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

公开(公告)号：US20220270849A1

公开(公告)日：2022-08-25

申请号：US17638765

申请日：2020-08-26

Applicant: ASML Netherlands B.V.

Inventor： Jun JIANG ,  Chih-Yu JEN ,  Ning YE ,  Jian ZHANG

IPC: H01J37/28 ,  G01R31/307

Abstract: A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.

公开(公告)号：US20230395352A1

公开(公告)日：2023-12-07

申请号：US18362757

申请日：2023-07-31

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jun JIANG ,  Jian ZHANG ,  Yixiang WANG

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20220189733A1

公开(公告)日：2022-06-16

申请号：US17553357

申请日：2021-12-16

Applicant: ASML Netherlands B.V.

Inventor： Ning YE ,  Jun JIANG ,  Jian ZHANG ,  Yixiang WANG

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.