公开(公告)号：US20230044490A1

公开(公告)日：2023-02-09

申请号：US17782741

申请日：2020-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Tatung CHOW ,  Been-Der CHEN ,  Yen-Wen LU

IPC: G03F1/70 ,  G06N3/08 ,  G06N3/04

Abstract: A method of determining a mask pattern for a target pattern to be printed on a substrate. The method includes partitioning a portion of a design layout including the target pattern into a plurality of cells with reference to a given location on the target pattern; assigning a plurality of variables within a particular cell of the plurality of cells, the particular cell including the target pattern or a portion thereof; and determining, based on values of the plurality of variables, the mask pattern for the target pattern such that a performance metric of a patterning process utilizing the mask pattern is within a desired performance range.