公开(公告)号：US20250021015A1

公开(公告)日：2025-01-16

申请号：US18705509

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Jin CHENG ,  Feng CHEN ,  Leiwu ZHENG ,  Yongfa FAN ,  Yen-Wen LU ,  Jen-Shiang WANG ,  Ziyang MA ,  Dianwen ZHU ,  Xi CHEN ,  Yu ZHAO

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/70

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.