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公开(公告)号:US20190079420A1
公开(公告)日:2019-03-14
申请号:US16084596
申请日:2017-01-26
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: Bearrach MOEST , Lowell Lane BAKER , James Robert DOWNES , Wijnand HOITINGA , Hermen Folken PEN
IPC: G03F7/20
Abstract: An apparatus including an illumination system to condition a radiation beam, a support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system to project the patterned radiation beam onto a target portion of the substrate, and a control system configured to: receive pattern data characterizing a pattern distribution, receive radiation data characterizing the radiation beam, determine a dissipation distribution of the pattern based on the pattern data and the radiation data, determine deformation of the pattern by applying the dissipation distribution in a thermo-mechanical model of the patterning device, and determine a control signal to control a component of the apparatus based on the deformation of the pattern.
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公开(公告)号:US20220373894A1
公开(公告)日:2022-11-24
申请号:US17766049
申请日:2020-09-07
Applicant: ASML Netherlands B.V.
Inventor: Andre Bernardus JEUNINK , Erik Henricus Egidius Ca EUMMELEN , Bearrach MOEST , Derk ONCK , Johannes Adrianus Cornelis M PIJNENBURG , Hermen Folken PEN
Abstract: A method is provided for determining surface parameters of a patterning device, comprising the steps of: positioning the patterning device with respect to a path of an exposure radiation beam using a first measurement system, providing the patterning device at a first focal plane of a chromatic lens arranged in a second measurement system, illuminating a part of a surface of the patterning device with radiation through the chromatic lens, wherein the radiation comprises a plurality of wavelengths, determining a position of the illuminated part of the patterning device in a first and second direction, collecting at least a portion of radiation reflected by the patterning device through the chromatic lens, measuring an intensity of the collected portion of radiation as a function of wavelength, to obtain spectral information of the illuminated area, and determining the surface parameters of the patterning device at the determined position from the spectral information.
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