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    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    1.
    发明申请
    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20190079420A1

    公开(公告)日：2019-03-14

    申请号：US16084596

    申请日：2017-01-26

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： Bearrach MOEST ,  Lowell Lane BAKER ,  James Robert DOWNES ,  Wijnand HOITINGA ,  Hermen Folken PEN

    IPC: G03F7/20

    Abstract: An apparatus including an illumination system to condition a radiation beam, a support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system to project the patterned radiation beam onto a target portion of the substrate, and a control system configured to: receive pattern data characterizing a pattern distribution, receive radiation data characterizing the radiation beam, determine a dissipation distribution of the pattern based on the pattern data and the radiation data, determine deformation of the pattern by applying the dissipation distribution in a thermo-mechanical model of the patterning device, and determine a control signal to control a component of the apparatus based on the deformation of the pattern.

    Estimating Deformation of a Patterning Device and/or a Change in Its Position
    2.
    发明申请
    Estimating Deformation of a Patterning Device and/or a Change in Its Position 有权
    估计图案化装置的变形和/或其位置变化

    公开(公告)号：US20170068171A1

    公开(公告)日：2017-03-09

    申请号：US15122772

    申请日：2015-03-05

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Bearrach MOEST ,  Peter A. DELMASTRO ,  Johannes ONVLEE ,  Adrianus Martinus VAN DER WIELEN ,  Christopher Charles WARD

    IPC: G03F7/20 ,  G01B11/14

    CPC classification number: G03F7/70616 ,  G01B11/14 ,  G03F7/70058 ,  G03F7/70775 ,  G03F7/70783 ,  G03F7/70875

    Abstract: A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

    Abstract translation: 提供了用于确定图案形成装置相对于图案形成装置的变形和/或移位位置的系统和方法。 该系统包括测量图案形成装置上的多个参考标记的相应位置的第一感测子系统和测量图案形成装置的边缘相对于支撑件的位置的第二感测子系统。 该系统还包括控制器，用于基于测量的图案形成装置上的标记的相应位置来确定图案化部分的绝对位置和绝对位置的变化，基于图案化装置的边缘确定相对位置的变化 测量边缘位置，并且估计图案形成装置相对于支撑件的位置的变化和图案形成装置的图案化部分的图案变形在一段时间内的变化。

    LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF APPLYING A PATTERN TO A SUBSTRATE
    3.
    发明申请
    LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF APPLYING A PATTERN TO A SUBSTRATE 有权
    光刻设备，设备制造方法和将图案应用于基板的方法

    公开(公告)号：US20140313500A1

    公开(公告)日：2014-10-23

    申请号：US14322625

    申请日：2014-07-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Marcus Adrianus VAN DE KERKHOF ,  Willem Jurrianus VENEMA ,  Bearrach MOEST ,  Vasco Miguel Miguel MATIAS SERRAO ,  Cedran BOMHOF

    IPC: G03F7/20

    CPC classification number: G03F7/70775 ,  B21B38/00 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7026 ,  G03F9/7088 ,  G03F9/7092 ,  H01J2235/062

    Abstract: A lithographic apparatus includes at least one image alignment sensor for receiving radiation projected from an alignment mark on a reticle. Processor processes signals from the sensor(s) to resolve spatial information in the projected alignment mark to establish a reference for measuring positional relationships between a substrate support and the patterning location. Examples of the sensor include line arrays of photodetectors. A single array can resolve spatial information in a plane of the sensor (X, Y direction) and in a perpendicular (Z) direction. At least a final step in establishing the reference position is performed while holding the substrate support stationary. Errors and delays induced by mechanical scanning of prior art sensors are avoided. Alternatively (not illustrated) the sensor is moved for mechanical scanning relative to the substrate support, independently of the main positioning systems.

    Abstract translation: 光刻设备包括至少一个图像对准传感器，用于接收从掩模版上的对准标记投射的辐射。 处理器处理来自传感器的信号以解决投影对准标记中的空间信息，以建立用于测量基板支撑件和图案化位置之间的位置关系的参考。 传感器的示例包括光电检测器的线阵列。 单个阵列可以解析传感器（X，Y方向）和垂直（Z）方向的平面内的空间信息。 在保持基板支撑固定的同时执行建立基准位置的至少最后一步。 避免了现有技术传感器的机械扫描引起的错误和延迟。 或者（未示出），传感器相对于基板支撑件移动以进行机械扫描，而与主定位系统无关。

    SYSTEM AND METHOD FOR CONDITIONING OPTICAL APPARATUSES
    4.
    发明公开
    SYSTEM AND METHOD FOR CONDITIONING OPTICAL APPARATUSES 审中-公开

    公开(公告)号：US20230251583A1

    公开(公告)日：2023-08-10

    申请号：US18015155

    申请日：2021-05-31

    Applicant: ASML Netherlands B.V.

    Inventor： Oleg Viacheslavovich VOZNYI ,  Bearrach MOEST

    IPC: G03F7/20

    CPC classification number: G03F7/70633 ,  G03F7/7085 ,  G03F7/70716 ,  G03F7/70558

    Abstract: The present invention relates to a stage system (130), which comprises a pre-exposure element (134), and to a method employing the pre-exposure element for conditioning an optical system (100). The pre-exposure element comprises a radiation receiving area at a surface of the stage system, wherein the radiation receiving area comprises at least one pre-exposure plate configured to receive radiation. The stage system comprises further a controller (140), wherein the controller is capable to control an optical parameter of the pre-exposure element, herewith controlling a portion of received radiation reflected by the pre-exposure element.

    MEASUREMENT SYSTEM AND METHOD FOR CHARACTERIZING A PATTERNING DEVICE
    6.
    发明申请
    MEASUREMENT SYSTEM AND METHOD FOR CHARACTERIZING A PATTERNING DEVICE 有权

    公开(公告)号：US20220373894A1

    公开(公告)日：2022-11-24

    申请号：US17766049

    申请日：2020-09-07

    Applicant: ASML Netherlands B.V.

    Inventor： Andre Bernardus JEUNINK ,  Erik Henricus Egidius Ca EUMMELEN ,  Bearrach MOEST ,  Derk ONCK ,  Johannes Adrianus Cornelis M PIJNENBURG ,  Hermen Folken PEN

    IPC: G03F7/20 ,  G03F1/84

    Abstract: A method is provided for determining surface parameters of a patterning device, comprising the steps of: positioning the patterning device with respect to a path of an exposure radiation beam using a first measurement system, providing the patterning device at a first focal plane of a chromatic lens arranged in a second measurement system, illuminating a part of a surface of the patterning device with radiation through the chromatic lens, wherein the radiation comprises a plurality of wavelengths, determining a position of the illuminated part of the patterning device in a first and second direction, collecting at least a portion of radiation reflected by the patterning device through the chromatic lens, measuring an intensity of the collected portion of radiation as a function of wavelength, to obtain spectral information of the illuminated area, and determining the surface parameters of the patterning device at the determined position from the spectral information.

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