公开(公告)号：US20240242930A1

公开(公告)日：2024-07-18

申请号：US18563841

申请日：2022-05-18

Applicant: ASML Netherlands B.V.

Inventor： Jan BEX ,  Nickolay STEPANENKO ,  Matthias OBERST ,  Harald Gert Helmut NEUBAUER ,  Thomas SCHWEIGER ,  Florian Alfons STIEGLITZ ,  Bernd Michael VOLLMER

IPC: H01J37/244 ,  G01T1/24 ,  G01T1/29

CPC classification number: H01J37/244 ,  G01T1/24 ,  G01T1/2928 ,  H01J2237/2441

Abstract: A charged particle detector may include a plurality of sensing elements formed in a substrate, wherein a sensing element of the plurality of sensing elements is formed of a first region on a first side of the substrate, and a second region on a second side of the substrate, the second side being opposite to the first side. The detector may also include a plurality of third regions formed on the second side of the substrate, the third regions including one or more circuit components. The detector may also include an array of fourth regions formed on the second side of the substrate, the array of fourth regions being between adjacent third regions.

公开(公告)号：US20240047173A1

公开(公告)日：2024-02-08

申请号：US18258522

申请日：2021-12-10

Applicant: ASML Netherlands B.V.

Inventor： Matthias OBERST ,  Harald Gert Helmut NEUBAUER ,  Thomas SCHWEIGER

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J2237/2441 ,  H01J2237/24495 ,  H01J2237/2446

Abstract: A monolithic detector may be used in a charged particle beam apparatus. The detector may include a plurality of sensing elements formed on a first side of a semiconductor substrate, each of the sensing elements configured to receive charged particles emitted from a sample and to generate carriers in proportion to a first property of a received charged particle, and a plurality of signal processing components formed on a second side of the semiconductor substrate, the plurality of signal processing components being part of a system configured to determine a value that represents a second property of the received charged particle. The substrate may have a thickness in a range from about 10 to 30 μm. The substrate may include a region configured to insulate the plurality of sensing elements formed on the first side from the plurality of signal processing components formed on the second side.