DUAL-USE READ-OUT CIRCUITRY IN CHARGED PARTICLE DETECTION SYSTEM

    公开(公告)号:US20240055221A1

    公开(公告)日:2024-02-15

    申请号:US18257736

    申请日:2021-12-13

    CPC classification number: H01J37/244 H01J2237/24495

    Abstract: An improved readout circuit for a charged particle detector and a method for operating the readout circuit are disclosed. An improved circuit comprises an amplifier configured to receive a signal representing an output of a sensor layer and comprising a first input terminal and an output terminal, a capacitor connected between the first input terminal and the output terminal, and a resistor connected in parallel with the capacitor between the first input terminal and the output terminal. The circuit can be configured to operate in a first mode and a second mode. The capacitor can be adjustable using a capacitance value of the capacitor to enable control of a gain of the circuit operating in the first mode and control of a bandwidth of the circuit operating in the second mode.

    MONOLITHIC DETECTOR
    3.
    发明公开
    MONOLITHIC DETECTOR 审中-公开

    公开(公告)号:US20240047173A1

    公开(公告)日:2024-02-08

    申请号:US18258522

    申请日:2021-12-10

    Abstract: A monolithic detector may be used in a charged particle beam apparatus. The detector may include a plurality of sensing elements formed on a first side of a semiconductor substrate, each of the sensing elements configured to receive charged particles emitted from a sample and to generate carriers in proportion to a first property of a received charged particle, and a plurality of signal processing components formed on a second side of the semiconductor substrate, the plurality of signal processing components being part of a system configured to determine a value that represents a second property of the received charged particle. The substrate may have a thickness in a range from about 10 to 30 μm. The substrate may include a region configured to insulate the plurality of sensing elements formed on the first side from the plurality of signal processing components formed on the second side.

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