公开(公告)号：US20150299883A1

公开(公告)日：2015-10-22

申请号：US14646739

申请日：2013-11-12

申请人： ATOTECH DEUTSCHLAND GMBH

发明人： Heiko BRUNNER ,  Bernd ROELFS ,  Agnieszka WITCZAK ,  Lars KOHLMANN ,  Olivier MANN ,  Christian OHDE ,  Timo BANGERTER ,  Angelo FERRO ,  Andreas KIRBS ,  Andre SCHMÖKEL ,  Dirk ROHDE ,  Stefanie ACKERMANN

IPC分类号： C25D3/38 ,  C25D5/02

CPC分类号： C25D3/38 ,  C25D3/58 ,  C25D5/02 ,  H01L21/2885 ,  H01L21/76898

摘要： The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

摘要翻译： 本发明涉及用于电子应用的印刷电路板，IC基板，半导体和玻璃装置的制造中铜和铜合金沉积的酸性电镀液。 根据本发明的电镀浴包含铜离子，至少一种酸和乙烯聚合物，其在两个末端包含氨基残基且不含有机结合的卤素。 电镀槽特别适用于填充具有铜的凹陷结构和柱状凸起结构的积聚。