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公开(公告)号：US12076805B2
公开(公告)日：2024-09-03
申请号：US17103368
申请日：2020-11-24
申请人： RAYTHEON COMPANY
发明人： Trae M. Blain , James S. Wilson
CPC分类号： B23K1/0012 , B23K1/0008 , C23C14/16 , C25D5/02 , H05K7/2039 , C25D5/50
摘要： A process for building a high-performance liquid flow-through plate is provided and includes providing a substrate formed of metal matrix composite (MMC) material, metallizing a surface of the substrate to reform the surface into a metallized surface, placing a braze foil on the metallized surface and executing a high-temperature and high-pressure bake whereby material of the braze foil diffuses into the metallized surface.
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公开(公告)号：US12052830B2
公开(公告)日：2024-07-30
申请号：US17542867
申请日：2021-12-06
申请人： R&D Circuits
发明人： Donald Eric Thompson
CPC分类号： H05K3/426 , C25D3/38 , C25D5/02 , C25D7/00 , H05K1/0222 , H05K1/182 , H05K3/0047 , H05K3/368 , H05K2201/09072 , H05K2201/09545 , H05K2201/10303 , H05K2201/10325 , H05K2201/10409 , H05K2203/0723
摘要： The present invention provides a novel method of constructing a coax spring-pin socket that furnishes better performance and is easier to manufacture in volume using common dielectrics and copper plating. This is accomplished by, in application, a lamination of PCB dielectric layers. This dielectric block is then drilled, plated, etched, and drilled in steps for the construction of a coaxial structure for the signal pins, and a ground structure for ground pins. This design process that can be quickly adjusted and customized for each design.
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公开(公告)号：US20240183053A1
公开(公告)日：2024-06-06
申请号：US18526271
申请日：2023-12-01
摘要： Methods and systems are provided for patterning surfaces, generating templates from the patterned surfaces, then using those templates to manufacture magnetizable components with micro- or nanoscale control over the physical properties of the component.
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公开(公告)号：US12000059B2
公开(公告)日：2024-06-04
申请号：US16467392
申请日：2017-12-11
发明人： Ali Hosseini , Ashton Partridge
IPC分类号： C25D7/00 , C25D3/50 , C25D5/02 , G01N27/30 , G01N27/327
CPC分类号： C25D5/02 , C25D3/50 , C25D7/00 , G01N27/30 , G01N27/327
摘要： Disclosed are electrode arrays and methods of focusing charge density (voltage or current) at a functional surface on electrode arrays. An example method comprises: a. providing an electrode array comprising: i. a support substrate; ii. at least one surface structure protruding from an upper surface of the support substrate wherein the surface structure includes an electrode layer; iii. a functional surface on the electrode layer, wherein the functional surface is on an upper portion of the at least one surface structure and wherein the functional surface is adapted to contact an active species in a conductive solution; b. exposing the surface structure to the conductive solution comprising an active species, in which a counter electrode is positioned; c. establishing a current or voltage between the functional surface on the electrode layer and the counter electrode such that the charge density is focussed at the functional surface on the electrode layer.
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公开(公告)号：US11990349B2
公开(公告)日：2024-05-21
申请号：US17413355
申请日：2019-10-21
CPC分类号： H01L21/4857 , C23C18/1603 , C23C18/1803 , C23C18/38 , C25D3/38 , C25D5/02 , C25D5/34 , C25D7/00
摘要： A method for manufacturing a package substrate including an insulating layer and a wiring conductor, including: forming, on one or both sides of a core resin layer, a substrate including a peelable first metal layer that has a thickness of 1-70 μm, a first insulating resin layer, and a second metal layer; forming a non-through hole reaching a surface of the first metal layer, performing electrolytic and/or electroless copper plating on its inner wall, and connecting the second and first metal layers; arranging a second insulating resin layer and a third metal layer and heating and pressurizing the first substrate to form a substrate; forming a non-through hole reaching a surface of the second metal layer, performing electrolytic and/or electroless copper plating on its inner wall, and connecting the second and third metal layers; peeling a third substrate; and patterning the first and third metal layers to form the wiring conductor.
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公开(公告)号：US11795563B2
公开(公告)日：2023-10-24
申请号：US17154805
申请日：2021-01-21
发明人： Michael LaVallee , David Walters , Thomas Hawkins
IPC分类号： B32B3/30 , C25D5/56 , B60Q1/26 , F21S43/20 , F21S43/50 , B60Q1/00 , B32B27/08 , C25D5/02 , C23C18/16 , C23F4/00 , B23K26/36
CPC分类号： C25D5/56 , B23K26/36 , B32B3/30 , B32B27/08 , B60Q1/0035 , B60Q1/2661 , C23C18/1605 , C23C18/1641 , C23C18/1653 , C23F4/00 , C25D5/02 , F21S43/26 , F21S43/50 , B32B2255/10 , B32B2255/205 , B32B2255/28 , B32B2451/00
摘要： A decorative component includes a plateable resin body portion that is light-transmissive. A thin intermediate layer of material is electrolessly deposited over the body portion. The intermediate layer is laser ablated to selectively remove the intermediate layer and expose the light transmissive portion. The part is then subjected to electroplating. The ablated areas do not receive the metal layers of the electroplating, thereby defining a pattern defined by the ablation. The laser ablation may define an outline, leaving the thin intermediate layer within the outline that is electrically isolated from areas outside of the outline. The electroplating process will not apply layers to the isolated areas, and the intermediate layer therein will dissolve, exposing the light transmissive body portion. An opposite side of the part is also exposed and transmissive, such that light will pass through the body portion and illuminate the pattern.
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公开(公告)号：US11746433B2
公开(公告)日：2023-09-05
申请号：US16674052
申请日：2019-11-05
CPC分类号： C25D3/38 , C25D5/02 , C25D5/18 , C25D7/00 , H05K1/0206 , H05K1/181 , H05K3/423 , H05K3/424 , H05K7/20154 , H05K2203/0789 , H05K2203/1492
摘要： A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at one or more through-holes and/or one or more micro-vias by contacting the electronic substrate with an acid copper electroplating solution. The acid copper plating solution comprises a source of copper ions; sulfuric acid; a source of chloride ions; a brightener; a wetter; and a leveler. The acid copper electroplating solution plates the one or more through-holes and/or the one or more micro-vias until metallization is complete.
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公开(公告)号：US20230272547A1
公开(公告)日：2023-08-31
申请号：US18304200
申请日：2023-04-20
发明人： Jing Xu , John L. Klocke , Marvin L. Bernt , Eric J. Bergman , Kwan Wook Roh
IPC分类号： C25D3/38 , C25D5/54 , C25D5/02 , H01L21/288 , C23C14/18 , H01L21/28 , H01L21/768 , C23C16/455
CPC分类号： C25D3/38 , C25D5/54 , C25D5/02 , H01L21/2885 , C23C14/18 , H01L21/28114 , H01L21/76873 , C23C16/45525
摘要： Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.
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公开(公告)号：US20230257895A1
公开(公告)日：2023-08-17
申请号：US18081648
申请日：2022-12-14
发明人： Nam Tran , John A. Hatten, JR. , Reid Henry Bowman , David Hammond , David Nicholas , Freddie L. Singleton
摘要： Described herein are methods of applying metals to substrates, where the methods include contacting the substrate with an aqueous metal plating composition comprising polyammonium bisulfate (“PABS”) and a dissolved metal or salt thereof. The methods allow application of metals to the substrate without need for electrical energy input or for an added chemical catalyst, chelating agent, complexing agent, reducing agent, stabilizer, or pH-modifying (or controlling) chemical compound.
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公开(公告)号：US20230178430A1
公开(公告)日：2023-06-08
申请号：US17998067
申请日：2021-04-27
IPC分类号： H01L21/768 , C25D7/12 , C25D3/12 , C25D3/56 , C25D5/02 , C25D5/50 , C25D17/00 , C25D21/12 , C25D21/08
CPC分类号： H01L21/76879 , H01L21/76898 , C25D7/123 , C25D3/12 , C25D3/562 , C25D5/02 , C25D5/50 , C25D17/001 , C25D21/12 , C25D21/08 , H01L21/76873
摘要： Disclosed are apparatus, systems, and methods for electroplating cobalt, nickel, and alloys thereof in interconnect features of partially or fully fabricated electronic devices. During electroplating, cobalt, nickel, or alloys thereof fill features by a bottom up electrofill mechanism. Examples of features that may be electrofilled with cobalt, nickel, or alloys thereof include micro TSVs, contacts for devices, and certain gates for transistors. Electroplating apparatus may include electroplating cells along with one or more instances of each of a post-electrofill module, an anneal chamber, a plasma pretreatment module, and a substrate pre-wetting module.
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