公开(公告)号：US08722448B2

公开(公告)日：2014-05-13

申请号：US14066715

申请日：2013-10-30

Applicant: AU Optronics Corp.

Inventor： Yu-Min Lin ,  Hsin-Li Chen ,  Feng-Yuan Gan

IPC: H01L21/00

CPC classification number: H01L31/12 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/0412 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2360/144 ,  H01L31/145 ,  H01L31/18

Abstract: A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region. The first electrodes are electrically connected to the first patterned semiconductor layer.

Abstract translation: 公开了一种光电检测器及其制造方法。 光检测器包括衬底，第一图案化半导体层，电介质层，图案化导电层，层间电介质，第二图案化半导体层，设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极 第二半导体层的部分。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。 介电层设置成覆盖基板和第一半导体层。 图案化导电层设置在电介质层上。 具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上。 第一电极电连接到第一图案化半导体层。

公开(公告)号：US10608088B2

公开(公告)日：2020-03-31

申请号：US15861933

申请日：2018-01-04

Applicant: AU Optronics Corp.

Inventor： Yu-Min Lin ,  Kuo-Lung Fang ,  Feng-Yuan Gan

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368

Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

公开(公告)号：US20180130887A1

公开(公告)日：2018-05-10

申请号：US15861933

申请日：2018-01-04

Applicant: AU Optronics Corp.

Inventor： Yu-Min Lin ,  Kuo-Lung Fang ,  Feng-Yuan Gan

IPC: H01L29/417 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/41733 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78618 ,  H01L29/78696

Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

公开(公告)号：US20140051200A1

公开(公告)日：2014-02-20

申请号：US14066715

申请日：2013-10-30

Applicant: AU Optronics Corp.

Inventor： Yu-Min Lin ,  Hsin-Li Chen ,  Feng-Yuan Gan

IPC: H01L31/12 ,  H01L31/18

CPC classification number: H01L31/12 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/0412 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2360/144 ,  H01L31/145 ,  H01L31/18

Abstract: A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region. The first electrodes are electrically connected to the first patterned semiconductor layer.

Abstract translation: 公开了一种光电检测器及其制造方法。 光检测器包括衬底，第一图案化半导体层，电介质层，图案化导电层，层间电介质，第二图案化半导体层，设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极 第二半导体层的部分。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。 介电层设置成覆盖基板和第一半导体层。 图案化导电层设置在电介质层上。 具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上。 第一电极电连接到第一图案化半导体层。

公开(公告)号：US20170125529A1

公开(公告)日：2017-05-04

申请号：US15360931

申请日：2016-11-23

Applicant: AU Optronics Corp.

Inventor： Yu-Min Lin ,  Kuo-Lung Fang ,  Feng-Yuan Gan

IPC: H01L29/417 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/41733 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78618 ,  H01L29/78696

Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.