Electrowetting element with photosensor
    1.
    发明授权
    Electrowetting element with photosensor 有权
    电光元件与光电传感器

    公开(公告)号:US09551865B1

    公开(公告)日:2017-01-24

    申请号:US15071024

    申请日:2016-03-15

    CPC classification number: G02B26/005 H01L22/14 H01L31/145

    Abstract: An electrowetting element comprising a photosensor. The photosensor comprises a photosensitive material overlapped by an electrowetting element electrode; a first photosensor contact in contact with the photosensitive material; and a second photosensor contact in contact with the photosensitive material.

    Abstract translation: 包含光电传感器的电润湿元件。 光传感器包括由电润湿元件电极重叠的感光材料; 与感光材料接触的第一光电传感器触点; 以及与感光材料接触的第二光电传感器接触。

    TFT flat sensor and manufacturing method therefor
    3.
    发明授权
    TFT flat sensor and manufacturing method therefor 有权
    TFT平板传感器及其制造方法

    公开(公告)号:US08895986B2

    公开(公告)日:2014-11-25

    申请号:US14023606

    申请日:2013-09-11

    Abstract: A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.

    Abstract translation: TFT平板传感器包括像素单元,每个像素单元包括:在基板上的公共电极和公共电极绝缘层,其中在公共电极绝缘层中在与公共电极相对应的位置处设置第一通孔; 公共电极绝缘层上的栅电极; 公共电极和栅电极上的第一导电膜层,其中第一导电膜层通过第一通孔与公共电极接触; 栅绝缘层,有源层,漏电极和源电极,第二导电膜层,保护层和第三导电膜层; 第二通孔设置在与第三导电膜层接触源电极的源电极对应的位置的保护层中。

    Method for fabricating photo detector
    4.
    发明授权
    Method for fabricating photo detector 有权
    光电检测器的制造方法

    公开(公告)号:US08722448B2

    公开(公告)日:2014-05-13

    申请号:US14066715

    申请日:2013-10-30

    Abstract: A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region. The first electrodes are electrically connected to the first patterned semiconductor layer.

    Abstract translation: 公开了一种光电检测器及其制造方法。 光检测器包括衬底,第一图案化半导体层,电介质层,图案化导电层,层间电介质,第二图案化半导体层,设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极 第二半导体层的部分。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。 介电层设置成覆盖基板和第一半导体层。 图案化导电层设置在电介质层上。 具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上。 第一电极电连接到第一图案化半导体层。

    TFT FLAT SENSOR AND MANUFACTURING METHOD THEREFOR
    5.
    发明申请
    TFT FLAT SENSOR AND MANUFACTURING METHOD THEREFOR 有权
    TFT平板传感器及其制造方法

    公开(公告)号:US20140077282A1

    公开(公告)日:2014-03-20

    申请号:US14023606

    申请日:2013-09-11

    Abstract: A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.

    Abstract translation: TFT平板传感器包括像素单元,每个像素单元包括:在基板上的公共电极和公共电极绝缘层,其中在公共电极绝缘层中在与公共电极相对应的位置处设置第一通孔; 公共电极绝缘层上的栅电极; 公共电极和栅电极上的第一导电膜层,其中第一导电膜层通过第一通孔与公共电极接触; 栅绝缘层,有源层,漏电极和源电极,第二导电膜层,保护层和第三导电膜层; 第二通孔设置在与第三导电膜层接触源电极的源电极对应的位置的保护层中。

    Retinal prosthesis
    6.
    发明授权
    Retinal prosthesis 有权
    视网膜假体

    公开(公告)号:US08150526B2

    公开(公告)日:2012-04-03

    申请号:US12368150

    申请日:2009-02-09

    Abstract: Apparatus is provided, including an external device, including a mount, which is placed in front of an eye of a subject. A laser is coupled to the mount and configured to emit toward the eye radiation that is outside of 380-750 nm. A partially-transparent mirror is coupled to the mount. An intraocular device is implanted entirely in the subject's eye, and includes a plurality of stimulating electrodes, and an energy receiver, which receives the radiation from the laser and generates a voltage drop in response thereto. A plurality of photosensors detect photons and generate a signal in response thereto. Driving circuitry is coupled to the energy receiver and to the photosensors, and receives the signals from the photosensors and utilizes the voltage drop to drive the electrodes to apply currents to the retina in response to the signals from the photosensors. Other embodiments are also described.

    Abstract translation: 提供了一种装置,包括外部装置,其包括安装件,该安装件放置在被检体的眼睛前方。 激光器耦合到安装座并且被配置为朝向在380-750nm之外的眼睛辐射发射。 部分透明的镜子连接到安装座。 眼内装置完全植入受试者的眼睛,并且包括多个刺激电极和能量接收器,其接收来自激光器的辐射并响应于此产生电压降。 多个光电传感器检测光子并响应于此产生信号。 驱动电路耦合到能量接收器和光电传感器,并且接收来自光电传感器的信号,并且利用电压降来驱动电极,以响应于来自光电传感器的信号而向视网膜施加电流。 还描述了其它实施例。

    RETINAL PROSTHESIS
    7.
    发明申请

    公开(公告)号:US20100204754A1

    公开(公告)日:2010-08-12

    申请号:US12368150

    申请日:2009-02-09

    Abstract: Apparatus is provided, including an external device, including a mount, which is placed in front of an eye of a subject. A laser is coupled to the mount and configured to emit toward the eye radiation that is outside of 380-750 nm. A partially-transparent mirror is coupled to the mount. An intraocular device is implanted entirely in the subject's eye, and includes a plurality of stimulating electrodes, and an energy receiver, which receives the radiation from the laser and generates a voltage drop in response thereto. A plurality of photosensors detect photons and generate a signal in response thereto. Driving circuitry is coupled to the energy receiver and to the photosensors, and receives the signals from the photosensors and utilizes the voltage drop to drive the electrodes to apply currents to the retina in response to the signals from the photosensors. Other embodiments are also described.

    Abstract translation: 提供了一种装置,包括外部装置,其包括安装件,该安装件放置在被检体的眼睛前方。 激光器耦合到安装座并且被配置为朝向在380-750nm之外的眼睛辐射发射。 部分透明的镜子连接到安装座。 眼内装置完全植入受试者的眼睛,并且包括多个刺激电极和能量接收器,其接收来自激光器的辐射并响应于此产生电压降。 多个光电传感器检测光子并响应于此产生信号。 驱动电路耦合到能量接收器和光电传感器,并且接收来自光电传感器的信号,并且利用电压降来驱动电极,以响应于来自光电传感器的信号而向视网膜施加电流。 还描述了其它实施例。

    Semiconductor device comprising a photoelectric current amplifier
    8.
    发明授权
    Semiconductor device comprising a photoelectric current amplifier 有权
    半导体器件包括光电放大器

    公开(公告)号:US07485838B2

    公开(公告)日:2009-02-03

    申请号:US11491507

    申请日:2006-07-24

    CPC classification number: H01L31/102 G01J1/44 H01L31/145 H04N5/2351

    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    Abstract translation: 本发明提供一种能够检测弱光到强光的光的光电转换装置,涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关,其中当入射光的强度低于预定强度时,光电二极管和放大器电路通过开关彼此电连接,使得光电流被放大器电路放大以输出,并且光电二极管和部分 或者所有的放大器电路都被开关电断开,使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置,能够检测弱光到强光的光。

    Color sensor with infrared correction having a filter layer blocking a portion of light of visible spectrum
    9.
    发明授权
    Color sensor with infrared correction having a filter layer blocking a portion of light of visible spectrum 有权
    具有红外校正的彩色传感器具有阻挡可见光谱的一部分光的滤光层

    公开(公告)号:US07435943B1

    公开(公告)日:2008-10-14

    申请号:US11693600

    申请日:2007-03-29

    Abstract: A light sensor that generates a first output signal indicative of an intensity of light received from a predetermined direction in a first band of wavelengths is disclosed. The light sensor includes a substrate having first and second photodetectors, a first filter layer, and a controller. The photodetectors are sensitive to light in the infrared portion of the optical spectrum as well as to light in the first band of wavelengths, and generate first and second photodetector signals. The first filter layer transmits light in the first band of wavelengths and light in the infrared portion of the optical spectrum while blocking light in a portion of the visible spectrum outside of the first band of wavelengths, without altering light received by the first photodetector. The controller processes the first and second photodetector signals to produce the first output signal that is corrected for infrared in the input light.

    Abstract translation: 公开了一种光传感器,其产生指示在第一波长波段中从预定方向接收的光的强度的第一输出信号。 光传感器包括具有第一和第二光电检测器的基板,第一过滤层和控制器。 光电检测器对光谱的红外部分中的光敏感,并且在第一波长波段中发光,并且产生第一和第二光电检测器信号。 第一滤光层在第一波长的波长范围内的光和光在光谱的红外部分中透射,同时阻挡在第一波长段外的可见光谱的一部分中的光,而不改变由第一光电检测器接收的光。 控制器处理第一和第二光电检测器信号以产生在输入光中被校正为红外的第一输出信号。

    Photodetector
    10.
    发明申请
    Photodetector 失效
    光电检测器

    公开(公告)号:US20080054157A1

    公开(公告)日:2008-03-06

    申请号:US11839864

    申请日:2007-08-16

    CPC classification number: H01L31/145

    Abstract: A photodetector to be incorporated in an optical pickup device, comprising: a photodiode that a laser light emitted from a laser diode is applied to and that outputs a signal corresponding to light amount of the laser light; and a translucent resin member configured to cover the photodiode, including a light receiving portion that the laser light is applied to and that causes the laser light to be applied to the photodiode, and a peripheral portion provided around the light receiving portion, the light receiving portion being smaller in thickness than the peripheral portion.

    Abstract translation: 一种光拾取装置中的光检测器,包括:将从激光二极管发射的激光施加到并输出与激光的光量对应的信号的光电二极管; 以及半透明树脂构件,被配置为覆盖光电二极管,包括施加激光的光接收部分,并且使激光施加到光电二极管;以及周边部分,设置在光接收部分周围,光接收 部分的厚度小于周边部分。

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