Abstract:
An electrowetting element comprising a photosensor. The photosensor comprises a photosensitive material overlapped by an electrowetting element electrode; a first photosensor contact in contact with the photosensitive material; and a second photosensor contact in contact with the photosensitive material.
Abstract:
A light receiving and emitting element includes a substrate; a light emitting element formed on an upper face of the substrate; a light receiving element formed on an upper face side of the substrate; a light emitting element-side first electrode pad; and a metal lump joined to the light emitting element-side first electrode pad. The light emitting element-side electrode pad is disposed the upper face of the substrate through an insulating layer so that the metal lump blocks light emitted from the light emitting element and propagating toward the light receiving element.
Abstract:
A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.
Abstract:
A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region. The first electrodes are electrically connected to the first patterned semiconductor layer.
Abstract:
A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode.
Abstract:
Apparatus is provided, including an external device, including a mount, which is placed in front of an eye of a subject. A laser is coupled to the mount and configured to emit toward the eye radiation that is outside of 380-750 nm. A partially-transparent mirror is coupled to the mount. An intraocular device is implanted entirely in the subject's eye, and includes a plurality of stimulating electrodes, and an energy receiver, which receives the radiation from the laser and generates a voltage drop in response thereto. A plurality of photosensors detect photons and generate a signal in response thereto. Driving circuitry is coupled to the energy receiver and to the photosensors, and receives the signals from the photosensors and utilizes the voltage drop to drive the electrodes to apply currents to the retina in response to the signals from the photosensors. Other embodiments are also described.
Abstract:
Apparatus is provided, including an external device, including a mount, which is placed in front of an eye of a subject. A laser is coupled to the mount and configured to emit toward the eye radiation that is outside of 380-750 nm. A partially-transparent mirror is coupled to the mount. An intraocular device is implanted entirely in the subject's eye, and includes a plurality of stimulating electrodes, and an energy receiver, which receives the radiation from the laser and generates a voltage drop in response thereto. A plurality of photosensors detect photons and generate a signal in response thereto. Driving circuitry is coupled to the energy receiver and to the photosensors, and receives the signals from the photosensors and utilizes the voltage drop to drive the electrodes to apply currents to the retina in response to the signals from the photosensors. Other embodiments are also described.
Abstract:
The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
Abstract:
A light sensor that generates a first output signal indicative of an intensity of light received from a predetermined direction in a first band of wavelengths is disclosed. The light sensor includes a substrate having first and second photodetectors, a first filter layer, and a controller. The photodetectors are sensitive to light in the infrared portion of the optical spectrum as well as to light in the first band of wavelengths, and generate first and second photodetector signals. The first filter layer transmits light in the first band of wavelengths and light in the infrared portion of the optical spectrum while blocking light in a portion of the visible spectrum outside of the first band of wavelengths, without altering light received by the first photodetector. The controller processes the first and second photodetector signals to produce the first output signal that is corrected for infrared in the input light.
Abstract:
A photodetector to be incorporated in an optical pickup device, comprising: a photodiode that a laser light emitted from a laser diode is applied to and that outputs a signal corresponding to light amount of the laser light; and a translucent resin member configured to cover the photodiode, including a light receiving portion that the laser light is applied to and that causes the laser light to be applied to the photodiode, and a peripheral portion provided around the light receiving portion, the light receiving portion being smaller in thickness than the peripheral portion.