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公开(公告)号:US20220368319A1
公开(公告)日:2022-11-17
申请号:US17517093
申请日:2021-11-02
发明人: Yi-Chen LU , Hsu-Chi LI , Yi-Jan CHEN , Boy-Yiing JAW , Chin-Tang CHUANG , Chung-Hung CHEN
IPC分类号: H03K3/356 , H03K19/0185 , H03K17/10
摘要: A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.
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公开(公告)号:US20230238946A1
公开(公告)日:2023-07-27
申请号:US18187262
申请日:2023-03-21
发明人: Yi-Chen LU , Hsu-Chi LI , Yi-Jan CHEN , Boy-Yiing JAW , Chin-Tang CHUANG , Chung-Hung CHEN
IPC分类号: H03K3/356 , H03K17/10 , H03K19/0185
CPC分类号: H03K3/356113 , H03K17/102 , H03K19/018521
摘要: A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.
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公开(公告)号:US20220368320A1
公开(公告)日:2022-11-17
申请号:US17516730
申请日:2021-11-02
发明人: Yi-Chen LU , Hsu-Chi LI , Yi-Jan CHEN , Boy-Yiing JAW , Chin-Tang CHUANG , Chung-Hung CHEN
IPC分类号: H03K5/02 , H03K19/0175
摘要: The disclosure provides a voltage adjust circuit. The voltage adjust circuit includes a buffer circuit, a bias circuit, a level shifter and a cross voltage limit circuit. The buffer circuit includes a plurality of pull-up transistors and a plurality of pull-down transistors. The pull-up transistors coupled in series between an output terminal of the circuit and a high voltage system terminal. The pull-down transistors coupled in series between the output terminal and a low voltage system terminal. The cross voltage limit circuit is configured to limit transient and static bias voltages across two terminals of the pull-up transistors or the pull-down transistors.
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