公开(公告)号：US12021040B2

公开(公告)日：2024-06-25

申请号：US18314433

申请日：2023-05-09

申请人： AUROS TECHNOLOGY, INC.

发明人： Hyun Chul Lee ,  Hyun Jin Chang ,  Sung Hoon Hong ,  Young Je Woo

IPC分类号： H01L23/544 ,  G03F1/42 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66

CPC分类号： H01L23/544 ,  G03F1/42 ,  G03F7/20 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12 ,  H01L2223/54426

摘要： An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.

公开(公告)号：US12107052B2

公开(公告)日：2024-10-01

申请号：US18312177

申请日：2023-05-04

申请人： AUROS TECHNOLOGY, INC.

发明人： Hyun Chul Lee ,  Hyun Jin Chang

IPC分类号： H01L23/544 ,  G03F7/00 ,  G06T7/00

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  G03F7/706837 ,  G03F7/706851 ,  G06T7/001 ,  G06T2207/30148 ,  G06T2207/30204 ,  H01L2223/54426

摘要： An overlay mark forming a Moire pattern, an overlay measurement method using the overlay mark, an overlay measurement apparatus using the overlay mark, and a manufacturing method of a semiconductor device using the overlay mark are provided. The overlay mark for measuring an overlay based on an image is configured to determine a relative misalignment between at least two pattern layers. The overlay mark includes a first overlay mark including a pair of first grating patterns which has a first pitch along a first direction and which is rotationally symmetrical by 180 degrees, and includes a second overlay mark including a pair of second grating patterns and a pair of third grating patterns. The second grating patterns partially overlap the first grating patterns and are rotationally symmetrical by 180 degrees, and the third grating patterns partially overlap the first grating patterns and are rotationally symmetrical by 180 degrees.

公开(公告)号：US11604421B1

公开(公告)日：2023-03-14

申请号：US17873727

申请日：2022-07-26

申请人： AUROS TECHNOLOGY, INC.

发明人： Sung Hoon Hong ,  Hyun Jin Chang ,  Hyun Chui Lee ,  Jack Woo

IPC分类号： H01L21/027 ,  G03F7/20

摘要： Provided are an overlay mark, and an overlay measurement method and a semiconductor device manufacturing method using the overlay mark. Specifically, provided is an overlay mark for determining relative misalignment between two or more pattern layers or between two or more patterns separately formed in one pattern layer, the overlay mark including a first overlay mark positioned in the center, a second overlay mark positioned above and below the first overlay mark or on the left and right thereof, and a third overlay mark and a fourth overlay mark each positioned in a diagonal line with the first overlay mark in between.