公开(公告)号：US20020011201A1

公开(公告)日：2002-01-31

申请号：US09908237

申请日：2001-07-18

Applicant: AXSUN Technologies, Inc.

Inventor： Zong-Long Liau ,  Margaret B. Stern

IPC: C30B028/12 ,  C30B023/00 ,  C30B028/14 ,  C30B025/00

CPC classification number: C30B29/40 ,  C23C16/4481 ,  C30B23/002

Abstract: An apparatus and method for creating a supply of group V vapor required for various material processing applications such as crystal growth or the mass transport process, when applied to III-V materials (e.g., GaP) comprises a stable source of group V material (e.g., a GaP wafer), a process tube, and inner tube, a three-zone furnace incorporating a cold trap zone for the group III material, and a nullloosenull plug for the process tube. The phosphorus vapor is generated by using a source GaP wafer placed at a higher temperature than that of the main process wafer in the mass transport process. When high phosphorous vapor concentration is desired, other solid sources such as InP or red P can be used. To minimize vapor loss to the ambient, both wafers are enclosed in a quartz tube equipped with a quartz plug. However, the source wafer generates not only phosphorus but also gallium vapor. The latter interferes with mass transport and needs to be filtered out. This is conveniently accomplished by employing a larger (longer) process tube and by further placing the source in a smaller inner tube within the main process tube. The source inner tube first directs the vapor to a cooler region, where gallium is selectively condensed out before it reaches the process wafer.

Abstract translation: 当应用于III-V材料（例如GaP）时，用于产生各种材料处理应用如晶体生长或质量传输过程所需的V族蒸气的供应的装置和方法包括稳定的V族材料源（例如 ，GaP晶片），工艺管和内管，三区域炉，其中包含用于组III材料的冷阱区和用于处理管的“松散”塞。 通过在质量传输过程中使用放置在比主工艺晶片更高的温度的源GaP晶片来产生磷蒸汽。 当需要高磷蒸气浓度时，可以使用其它固体源，例如InP或红P。 为了最小化对环境的蒸汽损失，将两个晶片封装在配备有石英塞的石英管中。 然而，源晶片不仅产生磷而且还产生镓蒸气。 后者干扰群众运输，需要过滤掉。 这通过采用较大的（较长）的工艺管并且进一步将源放置在主工艺管内较小的内管中而方便地完成。 源内管首先将蒸气引导到较冷的区域，其中镓在其到达处理晶片之前选择性地冷凝出来。