公开(公告)号：US06682605B2

公开(公告)日：2004-01-27

申请号：US10043017

申请日：2002-01-07

申请人： Aaron Cheng ,  Ting-Chun Wang ,  Yu-Ku Lin ,  Chun-Chang Chen ,  Yi-Lang Wang

发明人： Aaron Cheng ,  Ting-Chun Wang ,  Yu-Ku Lin ,  Chun-Chang Chen ,  Yi-Lang Wang

IPC分类号： B08B302

CPC分类号： H01L21/67051 ,  B08B3/02 ,  H01L21/32134 ,  Y10S134/902

摘要： An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.

摘要翻译： 描述了从晶片上的对准标记的顶部去除涂层的设备和方法。 该装置包括一个作为空腔的清洁室和悬挂在空腔中的盖构件，可旋转地安装在盖构件中的晶片卡盘，用于将晶片保持在倒置位置，使得对准标记面向下，并且在 至少两个溶剂分配臂安装在盖构件的外周区域中，其紧邻卡盘，用于当晶片保持在静止位置时向上朝向晶片的有效表面分配溶剂流， 至少两个溶剂分配臂对应于一个对准标记的位置定位。

公开(公告)号：US06695921B2

公开(公告)日：2004-02-24

申请号：US10170957

申请日：2002-06-13

申请人： Hsi-Kuei Cheng ,  Ting-Chu Wang ,  Yu-Ku Lin ,  Chin-Te Huang ,  Huai-Tei Yang ,  Chun-Chang Chen ,  Yi-Lang Wang

发明人： Hsi-Kuei Cheng ,  Ting-Chu Wang ,  Yu-Ku Lin ,  Chin-Te Huang ,  Huai-Tei Yang ,  Chun-Chang Chen ,  Yi-Lang Wang

IPC分类号： B05C1302

CPC分类号： H01L21/68735 ,  H01L21/6875 ,  Y10S269/903

摘要： An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.

摘要翻译： 用于半导体晶片的改进的环形支撑通过使用仅与晶片线接触的支撑销来减少边缘斜切操作期间晶片的污染。 支撑销围绕环的周边间隔开并且具有三角形横截面。 销的两个相交的侧面形成限定与晶片的线接触的边缘。 这些相交侧优选以60度和80度之间的角度相对于晶片倾斜。

公开(公告)号：US20060166458A1

公开(公告)日：2006-07-27

申请号：US11044814

申请日：2005-01-26

申请人： Yi-Lung Cheng ,  Szu-An Wu ,  Yi-Lang Wang

发明人： Yi-Lung Cheng ,  Szu-An Wu ,  Yi-Lang Wang

IPC分类号： H01L21/76 ,  H01L21/461

CPC分类号： H01L21/31053 ,  H01L21/76224

摘要： A shallow trench isolation (STI) structure for semiconductor devices is formed using a deposited silicon layer formed over a polish stop layer formed over an oxide formed on a substrate. The polish stop layer may be nitride. An opening is formed extending through the deposited silicon layer and the nitride and oxide layers and extending into the substrate. A deposited oxide is formed filling the opening and extending over the top surface of deposited silicon layer. A chemical mechanical polishing operation polishes the deposited silicon layer at a rate faster than the deposited oxide layer to produce an STI with a convex portion extending above the nitride layer. Dishing problems are avoided and the structure may be subsequently planarized.

摘要翻译： 用于半导体器件的浅沟槽隔离（STI）结构使用形成在形成在衬底上的氧化物上形成的抛光停止层上的沉积硅层形成。 抛光停止层可以是氮化物。 形成延伸穿过沉积的硅层和氮化物和氧化物层并延伸到衬底中的开口。 形成沉积氧化物，填充开口并在沉积的硅层的顶表面上延伸。 化学机械抛光操作以比沉积的氧化物层更快的速率抛光沉积的硅层，以产生具有在氮化物层上方延伸的凸部的STI。 避免了抛光问题，并且可以随后平面化该结构。