公开(公告)号：US20140053868A1

公开(公告)日：2014-02-27

申请号：US13592276

申请日：2012-08-22

申请人： Abbas Rastegar ,  Arun John Kadaksham

发明人： Abbas Rastegar ,  Arun John Kadaksham

IPC分类号： H01L21/02 ,  B08B3/12

CPC分类号： H01L21/02057 ,  B08B3/102 ,  B08B3/12 ,  B08B2203/0288 ,  G03F1/82 ,  H01L21/02052 ,  H01L21/67028

摘要： Embodiments of the present disclosure relate to methods and apparatus for reduction of particle defects from a semiconductor surface, such as for example the reduction of sub 100 micron defects. Methods and apparatus of the present disclosure are particularly useful in the manufacture of semiconductor devices when employing extreme ultraviolet photolithography. In some embodiments, a fluid stream is provided through a nozzle at conditions such that cavitation bubbles are formed, the cavitation bubbles being present in a stable cavitation state or regime. The fluid stream is flowed over at least a portion of the surface. A shockwave is generated or created in the fluid stream. The shockwave momentarily increases acoustic pressure in the fluid causing the cavitation bubbles to collapse and produce a jet or pulse of high fluid flow which removes particle defects from the surface.

摘要翻译： 本公开的实施例涉及用于从半导体表面减少颗粒缺陷的方法和装置，例如减少亚100微米缺陷。 本公开的方法和装置在采用极紫外光刻法时制造半导体器件时特别有用。 在一些实施例中，在形成空化气泡的条件下通过喷嘴提供流体流，空化气泡以稳定的空化状态或状态存在。 流体流在表面的至少一部分上流动。 在流体流中产生或产生冲击波。 冲击波暂时增加流体中的声压，导致气蚀气泡塌陷并产生高流体流的射流或脉冲，从表面去除颗粒缺陷。