公开(公告)号：US09029190B2

公开(公告)日：2015-05-12

申请号：US14028760

申请日：2013-09-17

Applicant: Academia Sinica

Inventor： Shih-Yen Lin ,  Meng-Yu Lin

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/02425 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/7781

Abstract: The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed.

Abstract translation: 本发明提供一种用于制造石英烯膜和晶体管的石墨烯通道的方法。 通过使用分子束外延技术在低温下制备石墨烯膜，并且石墨烯通道能够装配到晶体管中。 观察石墨烯晶体管内电流调制的优异特性。