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公开(公告)号:US20200212294A1
公开(公告)日:2020-07-02
申请号:US16709965
申请日:2019-12-11
申请人: Academia Sinica
发明人: Hsin LIN , Shih-Yu WU , Chuang-Han HSU
摘要: An electrically controlled nanomagnet and a spin orbit torque magnetic random access memory (SOT-MRAM) including the same are provided. The electrically controlled nanomagnet includes: a first spin-Hall material layer including a first spin-Hall material; a second spin-Hall material layer including a second spin-Hall material; and a first magnetic layer disposed between the first spin-Hall material layer and the second spin-Hall material layer, wherein the first spin-Hall material and the second spin-Hall material are substantially mirror image to each other.