公开(公告)号：US20200161206A1

公开(公告)日：2020-05-21

申请号：US16197351

申请日：2018-11-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian HU ,  Cheng-Yu TSAI

IPC: H01L23/367 ,  H01L23/538 ,  H01L25/16 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

Abstract: A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

公开(公告)号：US20210166987A1

公开(公告)日：2021-06-03

申请号：US17174209

申请日：2021-02-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian HU ,  Cheng-Yu TSAI

IPC: H01L23/367 ,  H01L23/538 ,  H01L25/16 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

Abstract: A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

公开(公告)号：US20220084926A1

公开(公告)日：2022-03-17

申请号：US17018701

申请日：2020-09-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian HU ,  Jin-Feng YANG ,  Cheng-Yu TSAI ,  Hung-Hsien HUANG

IPC: H01L23/498 ,  H01L23/427 ,  H01L23/00 ,  H01L21/48

Abstract: A substrate structure, a method for manufacturing the same and a semiconductor device structure including the same are provided. The substrate structure includes a heat pipe, a first conductive layer and an insulation layer. The heat pipe has an upper surface and a lower surface. The heat pipe includes an opening extending from the upper surface to the lower surface. The first conductive layer is disposed on the upper surface and includes a via structure passing through the opening. The insulation layer is disposed between the heat pipe and the conductive layer.