公开(公告)号：US11482482B2

公开(公告)日：2022-10-25

申请号：US17018701

申请日：2020-09-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Jin-Feng Yang ,  Cheng-Yu Tsai ,  Hung-Hsien Huang

IPC: H01L23/498 ,  H01L23/427 ,  H01L21/48 ,  H01L23/00

Abstract: A substrate structure, a method for manufacturing the same and a semiconductor device structure including the same are provided. The substrate structure includes a heat pipe, a first conductive layer and an insulation layer. The heat pipe has an upper surface and a lower surface. The heat pipe includes an opening extending from the upper surface to the lower surface. The first conductive layer is disposed on the upper surface and includes a via structure passing through the opening. The insulation layer is disposed between the heat pipe and the conductive layer.