公开(公告)号：US12111114B2

公开(公告)日：2024-10-08

申请号：US17163217

申请日：2021-01-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hung-Hsien Huang ,  Shin-Luh Tarng ,  Ian Hu ,  Chien-Neng Liao ,  Jui-Cheng Yu ,  Po-Cheng Huang

IPC: F28D15/04 ,  F28D15/02 ,  F28F13/18

CPC classification number: F28D15/046 ,  F28D15/0233 ,  F28D15/0283 ,  F28F13/187 ,  F28F2255/18

Abstract: A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.

公开(公告)号：US11139226B2

公开(公告)日：2021-10-05

申请号：US16579345

申请日：2019-09-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En Chen ,  Ian Hu ,  Hung-Hsien Huang

IPC: H01L23/46 ,  H01L23/495 ,  H01L23/367 ,  H01L23/31 ,  H01L23/473 ,  H01L23/427

Abstract: A semiconductor package structure includes a vapor chamber, a plurality of electrical contacts, a semiconductor die and an encapsulant. The vapor chamber defines an enclosed chamber for accommodating a working liquid. The electrical contacts surround the vapor chamber. The semiconductor die is disposed on the vapor chamber, and electrically connected to the electrical contacts through a plurality of bonding wires. The encapsulant covers a portion of the vapor chamber, portions of the electrical contacts, the semiconductor die and the bonding wires.

公开(公告)号：US11482482B2

公开(公告)日：2022-10-25

申请号：US17018701

申请日：2020-09-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Jin-Feng Yang ,  Cheng-Yu Tsai ,  Hung-Hsien Huang

IPC: H01L23/498 ,  H01L23/427 ,  H01L21/48 ,  H01L23/00

Abstract: A substrate structure, a method for manufacturing the same and a semiconductor device structure including the same are provided. The substrate structure includes a heat pipe, a first conductive layer and an insulation layer. The heat pipe has an upper surface and a lower surface. The heat pipe includes an opening extending from the upper surface to the lower surface. The first conductive layer is disposed on the upper surface and includes a via structure passing through the opening. The insulation layer is disposed between the heat pipe and the conductive layer.

公开(公告)号：US11205606B2

公开(公告)日：2021-12-21

申请号：US16730400

申请日：2019-12-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En Chen ,  Hung-Hsien Huang ,  Shin-Luh Tarng

IPC: H01L23/373 ,  H01L23/498

Abstract: A semiconductor device package includes a semiconductor die and an anisotropic thermal conductive structure. The semiconductor die includes a first surface, a second surface opposite to the first surface and edges connecting the first surface to the second surface. The anisotropic thermal conductive structure has different thermal conductivities in different directions. The anisotropic thermal conductive structure includes at least two pairs of film stacks, and each pair of the film stacks comprises a metal film and a nano-structural film alternately stacked. The anisotropic thermal conductive structure comprises a first thermal conductive section disposed on the first surface of the semiconductor die, and the first thermal conductive section is wider than the semiconductor die.