公开(公告)号：US20210280521A1

公开(公告)日：2021-09-09

申请号：US16813369

申请日：2020-03-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Fan CHEN ,  Yu-Ju LIAO ,  Chu-Jie YANG ,  Sheng-Hung SHIH

IPC: H01L23/538 ,  H01L23/498 ,  H01L21/48

Abstract: A substrate structure is disclosed. The substrate structure includes a carrier, a dielectric layer on the carrier, a patterned organic core layer in the dielectric layer, and a conductive via. The patterned organic core layer defines a passage extending in the dielectric layer towards the carrier. The conductive via extends through the passage towards the carrier without contacting the patterned organic core layer.