公开(公告)号：US11342282B2

公开(公告)日：2022-05-24

申请号：US16798170

申请日：2020-02-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsu-Chiang Shih ,  Hung-Yi Lin ,  Meng-Wei Hsieh ,  Yu Sheng Chang ,  Hsiu-Chi Liu ,  Mark Gerber

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/48 ,  H01L23/528

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.