公开(公告)号：US12181629B2

公开(公告)日：2024-12-31

申请号：US17625065

申请日：2020-06-24

Applicant: Agency for Science, Technology and Research

Inventor： Zeng Wang ,  Jinghua Teng ,  Shijie Wang ,  Ming Yang

IPC: G02B1/00 ,  G02B5/18 ,  G02B27/58 ,  G03H1/02 ,  B82Y20/00 ,  C01B19/00 ,  C01G39/06

Abstract: Various embodiments may relate to an optical device. The optical device may include a stacked structure having a first surface and a second surface opposite the first surface. The stacked structure may include a plurality of holes or grooves extending from the first surface towards the second surface. The stacked structure may include a transition metal dichalcogenide material (TMDC) material. A thickness of the stacked structure may be of any value less than 100 nm.

公开(公告)号：US20220283343A1

公开(公告)日：2022-09-08

申请号：US17625065

申请日：2020-06-24

Applicant: Agency for Science, Technology and Research

Inventor： Zeng Wang ,  Jinghua Teng ,  Shijie Wang ,  Ming Yang

IPC: G02B5/18 ,  G02B27/58 ,  C23C14/35 ,  C23C14/06

Abstract: Various embodiments may relate to an optical device. The optical device may include a stacked structure having a first surface and a second surface opposite the first surface. The stacked structure may include a plurality of holes or grooves extending from the first surface towards the second surface. The stacked structure may include a transition metal dichalcogenide material (TMDC) material. A thickness of the stacked structure may be of any value less than 100 nm.

公开(公告)号：US12245531B2

公开(公告)日：2025-03-04

申请号：US17636833

申请日：2020-09-18

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Henry Medina Silva ,  Dongzhi Chi ,  Jianwei Chai ,  Ming Yang ,  Shijie Wang ,  Shi Wun Tong ,  Carlos Manzano

IPC: H10N70/00 ,  C01B19/00 ,  H10N70/20

Abstract: Herein provided is a multilayered structure including one or more nanocrystalline layers each comprising a transition metal dichalcogenide, one or more substantially amorphous electrically insulating layers each comprising a transition metal oxide, wherein the transition metal oxide comprises a transition metal which is identical to the transition metal of the transition metal dichalcogenide, wherein the one or more nanocrystalline layers and the one or more substantially amorphous electrically insulating layers are formed in an alternating manner, and wherein each of the one or more nanocrystalline layers is formed adjacent to the substantially amorphous insulating layer. A resistive memory device comprising the multilayered structure and a process of fabricating the multilayered structure are also disclosed herein.

公开(公告)号：US11257663B2

公开(公告)日：2022-02-22

申请号：US16645512

申请日：2018-09-11

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Jianwei Chai ,  Shijie Wang ,  Dongzhi Chi ,  Ming Yang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

公开(公告)号：US20200279723A1

公开(公告)日：2020-09-03

申请号：US16645512

申请日：2018-09-11

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Jianwei Chai ,  Shijie Wang ,  Dongzhi Chi ,  Ming Yang

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/35

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.