公开(公告)号：US20200027491A1

公开(公告)日：2020-01-23

申请号：US16470969

申请日：2017-12-18

Applicant: Agency for Science, Technology and Research

Inventor： Xuanyao Fong ,  Anh Tuan Do ,  Xin Liu

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02

Abstract: Various embodiments may provide a memory cell. The memory cell may include a magnetic tunneling junction memory including a first end and a second end. The memory cell may include a first transistor including a control electrode, a first controlled electrode and a second controlled electrode. The memory cell may also include a second transistor including a control electrode, a first controlled electrode and a second controlled electrode. The memory cell may additionally include a diode having a first end and a second end. In various embodiments, the memory cell may include a further magnetic tunneling junction memory, and a third transistor.