摘要:
An object of the present invention is to provide a low-cost thermoelectric converter element having high productivity and excellent conversion efficiency. A thermoelectric converter element according to the present invention includes a substrate 4, a magnetic film 2 provided on the substrate 4 with a certain magnetization direction A and formed of a polycrystalline magnetically insulating material, and an electrode 3 provided on the magnetic film 2 with a material exhibiting a spin-orbit interaction. When a temperature gradient is applied to the magnetic film 2, a spin current is generated so as to flow from the magnetic film 2 toward the electrode 3. A current I is generated in a direction perpendicular to the magnetization direction A of the magnetic film 2 by the inverse spin Hall effect in the electrode 3.
摘要:
An object of the present invention is to provide a low-cost thermoelectric converter element having high productivity and excellent conversion efficiency. A thermoelectric converter element according to the present invention includes a substrate 4, a magnetic film 2 provided on the substrate 4 with a certain magnetization direction A and formed of a polycrystalline magnetically insulating material, and an electrode 3 provided on the magnetic film 2 with a material exhibiting a spin-orbit interaction. When a temperature gradient is applied to the magnetic film 2, a spin current is generated so as to flow from the magnetic film 2 toward the electrode 3. A current I is generated in a direction perpendicular to the magnetization direction A of the magnetic film 2 by the inverse spin Hall effect in the electrode 3.
摘要:
A thermoelectric conversion device includes: a substrate; two magnetic layers having a fixed magnetization direction with respect to the substrate; and at least one electrode including a material having a spin orbit interaction, wherein a gap (or dielectric layer of low thermal conductivity) is provided between the magnetic layers. A thickness of the gap (or dielectric layer) is of a distance within the range at that a magnetic dipole interaction is exerted, and a film thickness of the magnetic layers is of about a characteristic length determined by diffusion or the like of a magnetic excitation.
摘要:
In order to provide a sensor operating in a high sensitivity at a low cost and a radio sensor platform having a high energy efficiency, the sensor includes a detecting film which generates heat through incidence or adhesion of an object, a magnetic film which generates a spin current in a direction of a temperature gradient by the heat generated by the detecting film, and an electrode which convert the spin current generated by the magnetic film into an electric current.
摘要:
In order to provide a sensor operating in a high sensitivity at a low cost and a radio sensor platform having a high energy efficiency, the sensor includes a detecting film which generates heat through incidence or adhesion of an object, a magnetic film which generates a spin current in a direction of a temperature gradient by the heat generated by the detecting film, and an electrode which convert the spin current generated by the magnetic film into an electric current.
摘要:
There is provided a quantum computing circuit comprising first and second superconductive magnetic flux quantum bit elements (101, 102) and a coupling superconductive magnetic flux quantum bit element (103). The first and second superconductive magnetic flux quantum bit elements form superconductive loops including a plurality of Josephson junctions, are biased at a half-quantum magnetic flux, and have mutually different characteristic frequencies. The coupling superconductive magnetic flux quantum bit clement performs variable control between the elements (101, 102) in a parametric way by applying a microwave magnetic field pulse equal to the frequency difference between the elements (101, 102).
摘要:
In a quantum computing circuit forming a superconductive loop including a plurality of Josephson junctions, first and second superconductive magnetic flux quantum bit element (101, 102) are biased at a half-quantum magnetic flux, and have mutually different characteristic frequencies. A coupling superconductive magnetic flux quantum bit clement element (103) is located between the first and second superconductive magnetic flux quantum bit elements (101, 102) to perform parametric variable control between the element (101, 102) by supplying a microwave magnetic field pulse which is equal to the frequency difference between the elements (101, 102).
摘要:
An integrated circuit comprises plural superconducting circuit blocks connected through superconducting wiring strips, and each superconducting circuit block includes at least one superconducting logic circuit, constant input/output circuits connected between the input/output nodes of the circuit block and the superconducting logic circuit; parameters of the constant input/output circuits are regulated such that statically flow-in/flow-out current is approximately equal to zero at the input/output nodes of the superconducting logic circuit, whereby the superconducting logic circuit operates at the optimum operating point after the integration.