公开(公告)号：US20050244324A1

公开(公告)日：2005-11-03

申请号：US10526486

申请日：2003-09-04

申请人： Akimitsu Hatta ,  Hiroaki Yoshimura ,  Keiichi Ishimoto ,  Hiroaki Kanakusa ,  Shinichi Kawagoe

发明人： Akimitsu Hatta ,  Hiroaki Yoshimura ,  Keiichi Ishimoto ,  Hiroaki Kanakusa ,  Shinichi Kawagoe

IPC分类号： B01J37/02 ,  B01J23/745 ,  C23C16/04 ,  C23C16/24 ,  C30B25/00 ,  C30B29/62 ,  H01J9/02 ,  C01B33/02

CPC分类号： C30B25/005 ,  C30B29/06 ,  Y10S117/903 ,  Y10T428/30

摘要： By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.

摘要翻译： 通过使用催化剂等离子体CVD法在硅基板的表面上均匀地形成无限量的微针状晶体以使其垂直于基板的表面，可以可靠地均匀地大量地形成超微型针状硅 具有大致锥形的晶体，其尖端的曲率半径不小于1nm至不超过20nm，底面直径不小于10nm，其高度等于 或大于底表面的直径，在所需位置。

公开(公告)号：US07396409B2

公开(公告)日：2008-07-08

申请号：US10526486

申请日：2003-09-04

申请人： Akitmitsu Hatta ,  Hiroaki Yoshimura ,  Keiichi Ishimoto ,  Hiroaki Kanakusa ,  Shinichi Kawagoe

发明人： Akitmitsu Hatta ,  Hiroaki Yoshimura ,  Keiichi Ishimoto ,  Hiroaki Kanakusa ,  Shinichi Kawagoe

IPC分类号： C01B33/02

CPC分类号： C30B25/005 ,  C30B29/06 ,  Y10S117/903 ,  Y10T428/30

摘要： By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.

摘要翻译： 通过使用催化剂等离子体CVD法在硅基板的表面上均匀地形成无限量的微针状晶体以使其垂直于基板的表面，可以可靠地均匀地大量地形成超微型针状硅 具有大致锥形的晶体，其尖端的曲率半径不小于1nm至不超过20nm，底面直径不小于10nm，其高度等于 或大于底表面的直径，在所需位置。