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    Method and apparatus for crystal growth
    1.
    发明授权
    Method and apparatus for crystal growth 失效
    晶体生长的方法和装置

    公开(公告)号：US07718003B2

    公开(公告)日：2010-05-18

    申请号：US11945228

    申请日：2007-11-26

    申请人： Emanuel Michael Sachs

    发明人： Emanuel Michael Sachs

    IPC分类号： C30B35/00

    CPC分类号： C30B29/06 ,  C30B15/007 ,  C30B15/10 ,  Y10S117/903 ,  Y10T117/10 ,  Y10T117/1044 ,  Y10T117/1048

    摘要： A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

    摘要翻译： 描述了用于从熔体生长结晶或多晶体的方法和设备，其中熔体通过毛细管附着保留在台面坩埚的边缘特征上。 所得到的熔体表面的边界轮廓导致从熔体表面生长的带生长为扁平体的效果。 此外，通过使这些边缘靠近带状体，熔池的尺寸大大降低，从而降低了与该工艺相关的材料成本和电力成本。

    Methods for repair of single crystal superalloys by laser welding and products thereof
    2.
    发明授权
    Methods for repair of single crystal superalloys by laser welding and products thereof 有权
    通过激光焊接修复单晶超级合金的方法及其产品

    公开(公告)号：US07250081B2

    公开(公告)日：2007-07-31

    申请号：US10728543

    申请日：2003-12-04

    申请人： Yiping Hu ,  William F. Hehmann ,  Murali Madhava

    发明人： Yiping Hu ,  William F. Hehmann ,  Murali Madhava

    IPC分类号： C30B33/06

    CPC分类号： B23P6/007 ,  C30B29/52 ,  C30B33/06 ,  Y10S117/903 ,  Y10S117/904 ,  Y10S117/905

    摘要： Methods for repair of single crystal superalloys by laser welding and products thereof have been disclosed. The laser welding process may be hand held or automated. Laser types include: CO2, Nd:YAG, diode and fiber lasers. Parameters for operating the laser process are disclosed. Filler materials, which may be either wire or powder superalloys are used to weld at least one portion of a single crystal superalloy substrate.

    摘要翻译： 已经公开了通过激光焊接修复单晶超级合金的方法及其产品。 激光焊接过程可以是手持式的或自动的。 激光器类型包括：CO 2，Nd：YAG，二极管和光纤激光器。 公开了用于操作激光工艺的参数。 可以使用线材或粉末超合金的填充材料来焊接单晶超合金基材的至少一部分。

    Method and apparatus for crystal growth
    3.
    发明申请
    Method and apparatus for crystal growth 失效
    晶体生长的方法和装置

    公开(公告)号：US20060249071A1

    公开(公告)日：2006-11-09

    申请号：US11483438

    申请日：2006-07-10

    申请人： Emanuel Sachs

    发明人： Emanuel Sachs

    IPC分类号： C30B15/00 ,  C30B27/02 ,  C30B21/06 ,  C30B30/04 ,  C30B28/10

    CPC分类号： C30B29/06 ,  C30B15/007 ,  C30B15/10 ,  Y10S117/903 ,  Y10T117/10 ,  Y10T117/1044 ,  Y10T117/1048

    摘要： A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The boundary profile of the resulting melt surface results in an effect which induces a ribbon grown from the surface of the melt to grow as a flat body. Further, the size of the melt pool is substantially reduced by bringing these edges close to the ribbon, thereby reducing the materials cost and electric power cost associated with the process.

    摘要翻译： 描述了用于从熔体生长结晶或多晶体的方法和设备，其中熔体通过毛细管附着保留在台面坩埚的边缘特征上。 所得到的熔体表面的边界轮廓导致从熔体表面生长的带生长为扁平体的效果。 此外，通过使这些边缘靠近带状体，熔池的尺寸大大降低，从而降低了与该工艺相关的材料成本和电力成本。

    Method and apparatus for manufacturing tape-shaped silicon crystals with a threaded carrier
    5.
    发明授权
    Method and apparatus for manufacturing tape-shaped silicon crystals with a threaded carrier 失效
    用螺纹载体制造带状硅晶体的方法和装置

    公开(公告)号：US4664745A

    公开(公告)日：1987-05-12

    申请号：US755587

    申请日：1985-07-16

    申请人： Richard Falckenberg ,  Josef Grabmaier

    发明人： Richard Falckenberg ,  Josef Grabmaier

    IPC分类号： C30B15/06 ,  C30B15/00 ,  C30B29/06

    CPC分类号： C30B15/007 ,  Y10S117/90 ,  Y10S117/903

    摘要： A method for horizontal silicon tape drawing is provided which can be practiced at a high drawing speed. The carrier member uses parallel threads of a material having a higher emission factor .epsilon. than the emission factor of molten silicon and such threads serve as crystallization nucleators for silicon. A silicon melt tank is used which has a length l that is at least as long as the contacting length existing between the surface of molten silicon and the horizontally moving threads so that L=V.sub.z .multidot.t where v.sub.z is the drawing speed and t is the dwell time. The drawing direction d.sub.z is set inclined at an angle .alpha..ltoreq. 10.degree. relative to the horizontal. Radiant losses from the silicon melt surface are regulated by reflectors. The method provides the possibility of manufacturing tape-shaped silicon crystals 16 for solar cells with a constant thickness and width.

    摘要翻译： 提供了一种水平硅胶带拉伸方法，可以以高拉伸速度实施。 载体构件使用具有比熔融硅的排放因子更高的发射因子ε的材料的平行线，并且这种线作为硅的结晶成核剂。 使用硅熔池，其长度l至少等于存在于熔融硅表面和水平移动螺纹之间的接触长度，使得L = Vzxt其中vz是拉伸速度，t是停留时间 。 拉伸方向dz相对于水平面倾斜成α<10°的角度。 来自硅熔体表面的辐射损失由反射器调节。 该方法提供制造具有恒定厚度和宽度的太阳能电池的带状硅晶体16的可能性。

    System and method for regulating lateral growth in laser irradiated silicon films
    9.
    发明申请
    System and method for regulating lateral growth in laser irradiated silicon films 有权

    公开(公告)号：US20030000455A1

    公开(公告)日：2003-01-02

    申请号：US09894940

    申请日：2001-06-28

    发明人： Apostolos Voutsas

    IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B1/023 ,  C30B29/06 ,  Y10S117/903

    摘要： A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.

    Method for stabilizing dendritic web crystal growth
    10.
    发明申请
    Method for stabilizing dendritic web crystal growth 失效
    稳定树枝状晶体晶体生长的方法

    公开(公告)号：US20010017100A1

    公开(公告)日：2001-08-30

    申请号：US09791180

    申请日：2001-02-22

    发明人： Daniel L. Meier ,  Gregory T. Neugebauer ,  Edward V. Macuga ,  Robert P. Stoehr ,  Philip J. Simpson ,  Jalal Salami

    IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B028/10 ,  C30B027/02 ,  C30B030/04 ,  C30B001/00

    CPC分类号： C30B15/26 ,  C30B15/007 ,  C30B15/22 ,  C30B15/305 ,  Y10S117/903 ,  Y10T117/1032

    摘要： A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt during the step of growing the dendritic web crystal. An apparatus for stabilizing dendritic web growth is also described. The apparatus includes a crucible including a feed compartment for receiving pellets to facilitate melt replenishment and a growth compartment designed to hold a melt for dendritic web growth. The apparatus further includes a magnetic field generator configured to provide a magnetic field during dendritic web growth.

    摘要翻译： 描述了树枝状网生长的方法。 该方法包括提供熔体，从熔体中生长树枝状网状晶体，在生长树枝状晶体晶体的步骤期间补充熔体，以及在生长树枝状晶体晶体的步骤期间向熔体施加磁场。 还描述了用于稳定树枝状网生长的装置。 该装置包括坩埚，其包括用于接收颗粒以促进熔体补充的进料室和设计成保持用于树枝状网幅生长的熔体的生长室。 该装置还包括磁场发生器，其被配置为在树突纤维网生长期间提供磁场。