公开(公告)号：US06955989B2

公开(公告)日：2005-10-18

申请号：US09996681

申请日：2001-11-30

申请人： Alain E. Perregaux ,  Paul A. Hosier ,  Josef E. Jedlicka ,  Nicholas J. Salatino ,  Jagdish C. Tandon

发明人： Alain E. Perregaux ,  Paul A. Hosier ,  Josef E. Jedlicka ,  Nicholas J. Salatino ,  Jagdish C. Tandon

IPC分类号： B28D5/02 ,  H01L21/301 ,  H01L21/3065 ,  H01L21/302

CPC分类号： B28D5/022 ,  H01L21/78

摘要： The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.

摘要翻译： 本公开内容涉及通过将第二蚀刻步骤通过将第二蚀刻步骤修改为干蚀刻而不是湿蚀刻将芯片芯片切割方法修改为U形沟槽轮廓导致通过消除更昂贵的直接成本节省 工艺步骤，以及剥离显影的光致抗蚀剂层的需要。 此外，进入U形凹槽轮廓可实现额外的间接和更大的成本节省，这是由于加工量增加，产量提高和金属层缺陷减少。

公开(公告)号：US08129258B2

公开(公告)日：2012-03-06

申请号：US12646590

申请日：2009-12-23

申请人： Paul A. Hosier ,  Nicholas J. Salatino

发明人： Paul A. Hosier ,  Nicholas J. Salatino

IPC分类号： H01L21/00

CPC分类号： H01L23/544 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for dicing a semiconductor wafer, including: cutting a reference slot in a back main surface of the wafer; cutting a back slot in the back main surface, the back slot positioned with respect to the reference slot; determining a desired location for a chip edge with respect to the reference slot; and applying radiant energy in a path such that a series of reformed regions are formed within the wafer along the path. A crystalline structure of the wafer is modified in the series of reformed regions and an alignment of an edge of the laser is with respect to the desired location for the chip edge and in alignment with the back slot. The method includes separating the wafer along the series of reformed regions to divide portions of the wafer on either side of the series of reformed regions.

摘要翻译： 一种用于切割半导体晶片的方法，包括：切割晶片的后主表面中的参考槽; 切割后主表面中的后槽，相对于参考槽定位的后槽; 确定芯片边缘相对于参考时隙的期望位置; 并且在路径中施加辐射能，使得沿着路径在晶片内形成一系列重整区。 在一系列重整区域中修改了晶片的晶体结构，并且激光器边缘的对准相对于芯片边缘的期望位置并与后槽对准。 该方法包括沿着一系列重整区域分离晶片以将晶片的部分划分在一系列重整区域的两侧。

公开(公告)号：US06291317B1

公开(公告)日：2001-09-18

申请号：US09730819

申请日：2000-12-06

申请人： Nicholas J. Salatino ,  John C. Ackerman

发明人： Nicholas J. Salatino ,  John C. Ackerman

IPC分类号： H01L2146

CPC分类号： B81C1/00888 ,  B81B2201/052 ,  Y10S83/906 ,  Y10S83/945 ,  Y10T83/0524 ,  Y10T83/0572 ,  Y10T83/0581 ,  Y10T83/0586

摘要： A method for dicing small devices including MEMS, ink jet printheads, lasers etc. The method comprises making a first pass cut into a substrate with a blade of narrow kerf and having long wear characteristics. This first pass cut is then followed with a polishing blade of wider kerf having desirable smooth cutting qualities.

摘要翻译： 一种用于切割小型器件（包括MEMS，喷墨打印头，激光器等）的方法。该方法包括使用具有窄切口刀片并具有长磨损特性的第一次通过切割成基底。 然后，第一次通过切割随后具有较宽切口的抛光刀片具有所需的平滑切割质量。